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Datasheets for 204B

Datasheets found :: 1376
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 KM416C1204BJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
182 KM416C1204BJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
183 KM416C1204BJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
184 KM416C1204BJ-L7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
185 KM416C1204BT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
186 KM416C1204BT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
187 KM416C1204BT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
188 KM416C1204BT-7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
189 KM416C1204BT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
190 KM416C1204BT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
191 KM416C1204BT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
192 KM416C1204BT-L7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
193 KM416V1204BJ 1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT Samsung Electronic
194 KM416V1204BJ-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
195 KM416V1204BJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
196 KM416V1204BJ-7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
197 KM416V1204BJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
198 KM416V1204BJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
199 KM416V1204BJ-L7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
200 KM416V1204BT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
201 KM416V1204BT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
202 KM416V1204BT-7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
203 KM416V1204BT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
204 KM416V1204BT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
205 KM416V1204BT-L7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
206 LMK04821 Ultra Low Jitter Synthesizer and Jitter Cleaner with JESD204B Support 64-WQFN -40 to 85 Texas Instruments
207 LMK04821NKDR Ultra Low Jitter Synthesizer and Jitter Cleaner with JESD204B Support 64-WQFN -40 to 85 Texas Instruments
208 LMK04821NKDT Ultra Low Jitter Synthesizer and Jitter Cleaner with JESD204B Support 64-WQFN -40 to 85 Texas Instruments
209 LTC2122 Dual14-Bit 170Msps ADC with JESD204B Serial Outputs Linear Technology
210 LTC2122CUK#PBF Dual14-Bit 170Msps ADC with JESD204B Serial Outputs Linear Technology


Datasheets found :: 1376
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