| No. |
Part Name |
Description |
Manufacturer |
| 181 |
M29W800B120N1TR |
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
ST Microelectronics |
| 182 |
M29W800T120N1R |
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
ST Microelectronics |
| 183 |
M29W800T120N1TR |
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
ST Microelectronics |
| 184 |
M59DR008E120N1T |
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
ST Microelectronics |
| 185 |
M59DR008F120N1T |
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
ST Microelectronics |
| 186 |
M59DR032A120N1T |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
ST Microelectronics |
| 187 |
M59DR032B120N1T |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
ST Microelectronics |
| 188 |
M59DR032C120N1T |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
ST Microelectronics |
| 189 |
M59DR032D120N1T |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
ST Microelectronics |
| 190 |
M59DR032E120N1T |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
ST Microelectronics |
| 191 |
M59DR032F120N1T |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
ST Microelectronics |
| 192 |
MDD255-20N1 |
Thyristor and Rectifiers Modules |
IXYS |
| 193 |
MDD310-20N1 |
Thyristor and Rectifiers Modules |
IXYS |
| 194 |
MDD312-20N1 |
Thyristor and Rectifiers Modules |
IXYS |
| 195 |
MDD95-20N1B |
Thyristor and Rectifiers Modules |
IXYS |
| 196 |
MDO500-20N1 |
High Power Diode Modules |
IXYS Corporation |
| 197 |
MGP20N14CL |
Internally Clamped, N-Channel IGBT |
Motorola |
| 198 |
MGP20N14CL-D |
SMARTDISCRETES Internally Clamped, N-Channel IGBT |
ON Semiconductor |
| 199 |
MGW20N120 |
Insulated Gate Bipolar Transistor |
Motorola |
| 200 |
MGW20N120 |
OBSOLETE - Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
| 201 |
MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 202 |
MGY20N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 203 |
MGY20N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 204 |
MGY20N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 205 |
MTP20N10 |
N-Channel Power MOSFETs, 20 A, 60-100 V |
Fairchild Semiconductor |
| 206 |
MTP20N10E |
Trans MOSFET N-CH 150V 20A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 207 |
MTP20N15E |
Power MOSFET 20 Amps, 150 Volts |
ON Semiconductor |
| 208 |
MTP20N15E-D |
Power MOSFET 20 Amps, 150 Volts N-Channel TO-220 |
ON Semiconductor |
| 209 |
NGTB20N120IHL |
IGBT 1200V 20A FS1 Induction Heating |
ON Semiconductor |
| 210 |
NGTB20N120IHR |
IGBT 1200V 20A FS2-RC Induction Heating |
ON Semiconductor |
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