| No. |
Part Name |
Description |
Manufacturer |
| 181 |
R21160 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 182 |
RN2116 |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 183 |
RN2116F |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 184 |
RN2116FT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 185 |
RN2116MFV |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 186 |
S21160 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 187 |
STV2116A |
BUS CONTROLLED PAL/NTSC TV PROCESSOR |
SGS Thomson Microelectronics |
| 188 |
STV2116A |
BUS CONTROLLED PAL/NTSC TV PROCESSOR |
ST Microelectronics |
| 189 |
T221160A |
64K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
| 190 |
T221160A-30J |
64K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
| 191 |
T221160A-30J |
30ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 192 |
T221160A-30S |
64K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
| 193 |
T221160A-30S |
30ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 194 |
T221160A-35J |
64K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
| 195 |
T221160A-35J |
35ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 196 |
T221160A-35S |
64K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
| 197 |
T221160A-35S |
35ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 198 |
TLP2116 |
Photocoupler (photo-IC output) |
TOSHIBA |
| 199 |
TPS72116 |
Cap Free, Low-Noise, Low Input Voltage, 150mA Low Dropout Regulator |
Texas Instruments |
| 200 |
TPS72116DBVR |
Cap Free, Low-Noise, Low Input Voltage, 150mA Low Dropout Regulator |
Texas Instruments |
| 201 |
TPS72116DBVRG4 |
Low Input Voltage, 150-mA Low-Dropout Linear Regulators 5-SOT-23 -40 to 125 |
Texas Instruments |
| 202 |
TPS72116DBVT |
Cap Free, Low-Noise, Low Input Voltage, 150mA Low Dropout Regulator |
Texas Instruments |
| 203 |
UN2116 |
Composite Device - Transistors with built-in Resistor |
Panasonic |
| 204 |
UNR2116 |
Composite Device - Transistors with built-in Resistor |
Panasonic |
| 205 |
V62C21164096 |
256K x 16, 0.20 um CMOS STATIC RAM |
Mosel Vitelic Corp |
| 206 |
V62C21164096L-70B |
256K x 16 CMOS static RAM |
Mosel Vitelic Corp |
| 207 |
V62C21164096L-70BI |
256K x 16 CMOS static RAM |
Mosel Vitelic Corp |
| 208 |
V62C21164096L-70T |
256K x 16 CMOS static RAM |
Mosel Vitelic Corp |
| 209 |
V62C21164096L-70TI |
256K x 16 CMOS static RAM |
Mosel Vitelic Corp |
| 210 |
V62C21164096L-85B |
256K x 16 CMOS static RAM |
Mosel Vitelic Corp |
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