No. |
Part Name |
Description |
Manufacturer |
181 |
2N4387 |
PNP Silicon Medium Power Transistor (up to 25 watts) |
Transitron Electronic |
182 |
2N4388 |
PNP Silicon Medium Power Transistor (up to 25 watts) |
Transitron Electronic |
183 |
2N4898 |
Medium-power PNP silicon power transistor. 4 A, 40 V, 25 W. |
Motorola |
184 |
2N4899 |
Medium-power PNP silicon power transistor. 4 A, 60 V, 25 W. |
Motorola |
185 |
2N4900 |
Medium-power PNP silicon power transistor. 4 A, 80 V, 25 W. |
Motorola |
186 |
2N5179 |
0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. |
Continental Device India Limited |
187 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
188 |
2N5204 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
189 |
2N5205 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
190 |
2N5206 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
191 |
2N5207 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
192 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
193 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
194 |
2N6122 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
195 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
196 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
197 |
2N6199 |
25 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
198 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
199 |
2N6439 |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Motorola |
200 |
2N6504 |
Thyristor, 25 amperes, 50 volt |
Teccor Electronics |
201 |
2N6505 |
Thyristor, 25 amperes, 100 volt |
Teccor Electronics |
202 |
2N6506 |
Thyristor, 25 amperes, 200 volt |
Teccor Electronics |
203 |
2N6507 |
Thyristor, 25 amperes, 400 volt |
Teccor Electronics |
204 |
2N6508 |
Thyristor, 25 amperes, 600 volt |
Teccor Electronics |
205 |
2N6621 |
25 V, 25 mA, NPN silicon RF broadband transistor |
Siemens |
206 |
2N6621 |
25 V, 25 mA, NPN silicon RF broadband transistor |
Siemens |
207 |
2N6686 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
208 |
2N6687 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
209 |
2N6688 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
210 |
2N6719 |
0.850W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 - hFE |
Continental Device India Limited |
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