| No. |
Part Name |
Description |
Manufacturer |
| 181 |
AT28HC64B-90SC |
64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection |
Atmel |
| 182 |
AT28HC64B-90SI |
64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection |
Atmel |
| 183 |
AT28HC64B-90TC |
64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection |
Atmel |
| 184 |
AT28HC64B-90TI |
64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection |
Atmel |
| 185 |
BAT28H |
Diode-Arrays |
FERRANTI |
| 186 |
BD6528HFV |
Load Switch ICs for Portable Equipment |
ROHM |
| 187 |
BD6528HFV-TR |
Load Switch ICs for Portable Equipment |
ROHM |
| 188 |
CAT28HT256 |
256K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
| 189 |
CAT28HT256D-20 |
256K-bit CMOS parallel EEPROM |
Catalyst Semiconductor |
| 190 |
CAT28HT256D-25 |
256K-bit CMOS parallel EEPROM |
Catalyst Semiconductor |
| 191 |
CAT28HT256HD-20 |
256K-bit CMOS parallel EEPROM |
Catalyst Semiconductor |
| 192 |
CAT28HT256HD-25 |
256K-bit CMOS parallel EEPROM |
Catalyst Semiconductor |
| 193 |
CAT28HT64 |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
| 194 |
CM1000HA-28H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 195 |
CM1000HA-28H |
Single IGBTMOD 1000 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 196 |
CM100DY-28H |
Dual IGBTMOD 100 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 197 |
CM100HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 198 |
CM100TF-28H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 199 |
CM100TF-28H |
IGBT Modules:1400V |
Mitsubishi Electric Corporation |
| 200 |
CM100TF-28H |
Six-IGBT IGBTMOD 100 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 201 |
CM150DY-28H |
Dual IGBTMOD 150 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 202 |
CM200DY-28H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 203 |
CM200DY-28H |
IGBT Modules:1400V |
Mitsubishi Electric Corporation |
| 204 |
CM200DY-28H |
Dual IGBTMOD 200 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 205 |
CM300DY-28H |
IGBT Modules:1400V |
Mitsubishi Electric Corporation |
| 206 |
CM300DY-28H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 207 |
CM300DY-28H |
Dual IGBTMOD 300 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 208 |
CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 209 |
CM400HA-28H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 210 |
CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
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