No. |
Part Name |
Description |
Manufacturer |
181 |
2N6124 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
182 |
2N6124 |
PNP Power Transistor TO-220 |
National Semiconductor |
183 |
2N6124 |
PNP Power Transistor |
National Semiconductor |
184 |
2N6124 |
PNP silicon power transistor |
National Semiconductor |
185 |
2N6124 |
Trans GP BJT PNP 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
186 |
2N6124 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
187 |
2N6124 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
188 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
189 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
190 |
2N6125 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
191 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
192 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
193 |
2N6125 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
194 |
2N6125 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
195 |
2N6125 |
PNP Power Transistor TO-220 |
National Semiconductor |
196 |
2N6125 |
PNP Power Transistor |
National Semiconductor |
197 |
2N6125 |
PNP silicon power transistor |
National Semiconductor |
198 |
2N6125 |
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
199 |
2N6125 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
200 |
2N6125 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
201 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
202 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
203 |
2N6126 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
204 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
205 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
206 |
2N6126 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
207 |
2N6126 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
208 |
2N6126 |
PNP Power Transistor TO-220 |
National Semiconductor |
209 |
2N6126 |
PNP Power Transistor |
National Semiconductor |
210 |
2N6126 |
PNP silicon power transistor |
National Semiconductor |
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