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Datasheets for 300

Datasheets found :: 66800
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No. Part Name Description Manufacturer
181 1110D 1000 V single phase bridge 1.4-1.5 A forward current, 3000 ns recovery time Voltage Multipliers
182 1110E 1000 V single phase bridge 1.4-1.5 A forward current, 3000 ns recovery time Voltage Multipliers
183 1110F 1000 V single phase bridge 1.4-1.5 A forward current, 3000 ns recovery time Voltage Multipliers
184 1202B 200 V single phase bridge 3.0 A forward current, 3000 ns recovery time Voltage Multipliers
185 1202C 200 V single phase bridge 3.0 A forward current, 3000 ns recovery time Voltage Multipliers
186 1202E 200 V single phase bridge 3.0 A forward current, 3000 ns recovery time Voltage Multipliers
187 1206B 600 V single phase bridge 3.0 A forward current, 3000 ns recovery time Voltage Multipliers
188 1206C 600 V single phase bridge 3.0 A forward current, 3000 ns recovery time Voltage Multipliers
189 1206E 600 V single phase bridge 3.0 A forward current, 3000 ns recovery time Voltage Multipliers
190 1210B 1000 V single phase bridge 3.0 A forward current, 3000 ns recovery time Voltage Multipliers
191 1210C 1000 V single phase bridge 3.0 A forward current, 3000 ns recovery time Voltage Multipliers
192 1210E 1000 V single phase bridge 3.0 A forward current, 3000 ns recovery time Voltage Multipliers
193 1214-300 300 W, 50 V, 1200-1400 MHz common base transistor GHz Technology
194 1214-300 300 W, 50 V, 1200-1400 MHz common base transistor GHz Technology
195 1214-300 Pulsed Power L-Band (Si) Microsemi
196 1214-300M Pulsed Power L-Band (Si) Microsemi
197 1214-300V Pulsed Power L-Band (Si) Microsemi
198 12FC12 Silicon diffused junction rectifier 300V 12A TOSHIBA
199 12FD12 Silicon diffused junction rectifier 300V 12A TOSHIBA
200 12FXF11 Silicon alloy-diffused junction avalanche rectifier 3000V 3.8kW 12A TOSHIBA
201 1300-102-4XX 2.54mm IDC Connector Methode Electronics Incorporated
202 13003BR NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Microelectronics
203 13003BR NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Microelectronics
204 13003BR TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) Korea Electronics (KEC)
205 13003BR POWER TRANSISTORS(1.5A,300-400V,40W) MOSPEC Semiconductor
206 13003BR POWER TRANSISTORS(1.5A,300-400V,40W) MOSPEC Semiconductor
207 13003BR 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS Motorola
208 13003BR 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS Motorola
209 13003BR NPN SILICON TRANSISTOR Wing Shing Computer Components
210 14-DIP-300 Tube Packing Data Fairchild Semiconductor


Datasheets found :: 66800
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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