| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SB1335A |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM |
| 182 |
2SC1335 |
Transistor - JEIDA series |
National Semiconductor |
| 183 |
2SC1335 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
Unknow |
| 184 |
2SC2335 |
SWITCHING SERIES NPN POWER TRANSISTORS(NPN) |
MOSPEC Semiconductor |
| 185 |
2SC2335 |
Silicon transistor |
NEC |
| 186 |
2SC2335 |
Trans GP BJT NPN 400V 15A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 187 |
2SC2335 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 188 |
2SC2335-S |
Silicon transistor |
NEC |
| 189 |
2SC2335-Z |
Silicon transistor |
NEC |
| 190 |
2SC2335F |
Silicon NPN Power Transistors TO-220F package |
Savantic |
| 191 |
2SC3335 |
Silicon NPN triple diffused high voltage switching transistor, Color TV chroma output applications |
TOSHIBA |
| 192 |
2SC3351-L |
For amplify low noise and high frequency. |
NEC |
| 193 |
2SC3351-T1B |
For amplify low noise and high frequency. |
NEC |
| 194 |
2SC3351-T2B |
For amplify low noise and high frequency. |
NEC |
| 195 |
2SC3352 |
Power Transistor - Silicon NPN Triple-Diffused Junction Mesa Type |
Panasonic |
| 196 |
2SC3352 |
Silicon NPN Power Transistors TO-220Fa package |
Savantic |
| 197 |
2SC3352A |
Power Transistor - Silicon NPN Triple-Diffused Junction Mesa Type |
Panasonic |
| 198 |
2SC3353 |
Power Transistor - Silicon NPN Triple-Diffused Junction Mesa Type |
Panasonic |
| 199 |
2SC3353A |
Power Transistor - Silicon NPN Triple-Diffused Junction Mesa Type |
Panasonic |
| 200 |
2SC3354 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 201 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 202 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 203 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 204 |
2SC3355-T |
For amplify low noise and high frequency |
NEC |
| 205 |
2SC3356 |
MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) |
NEC |
| 206 |
2SC3356-L |
For amplify low noise and high frequency |
NEC |
| 207 |
2SC3356-T1B |
For amplify low noise and high frequency |
NEC |
| 208 |
2SC3356-T2B |
For amplify low noise and high frequency |
NEC |
| 209 |
2SC3356-VM |
For amplify low noise and high frequency |
NEC |
| 210 |
2SC3357 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| | | |
