No. |
Part Name |
Description |
Manufacturer |
181 |
FEP6CT |
Dual Ultrafast Plastic Rectifiers, Forward Current 6.0A, Reverse Recovery Time 35ns |
Vishay |
182 |
FEP6DT |
Dual Ultrafast Plastic Rectifiers, Forward Current 6.0A, Reverse Recovery Time 35ns |
Vishay |
183 |
FEPB6AT |
Dual Ultrafast Plastic Rectifiers, Forward Current 6.0A, Reverse Recovery Time 35ns |
Vishay |
184 |
FEPB6BT |
Dual Ultrafast Plastic Rectifiers, Forward Current 6.0A, Reverse Recovery Time 35ns |
Vishay |
185 |
FEPB6CT |
Dual Ultrafast Plastic Rectifiers, Forward Current 6.0A, Reverse Recovery Time 35ns |
Vishay |
186 |
FEPB6DT |
Dual Ultrafast Plastic Rectifiers, Forward Current 6.0A, Reverse Recovery Time 35ns |
Vishay |
187 |
FEPF6AT |
Dual Ultrafast Plastic Rectifiers, Forward Current 6.0A, Reverse Recovery Time 35ns |
Vishay |
188 |
FEPF6BT |
Dual Ultrafast Plastic Rectifiers, Forward Current 6.0A, Reverse Recovery Time 35ns |
Vishay |
189 |
FEPF6CT |
Dual Ultrafast Plastic Rectifiers, Forward Current 6.0A, Reverse Recovery Time 35ns |
Vishay |
190 |
FEPF6DT |
Dual Ultrafast Plastic Rectifiers, Forward Current 6.0A, Reverse Recovery Time 35ns |
Vishay |
191 |
GLT41016-35J4 |
35ns; 64K x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
192 |
GLT41116-35J4 |
35ns; 64K x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
193 |
GLT41116-35TC |
35ns; 64K x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
194 |
GLT41216-35J4 |
35ns; 64K x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
195 |
GLT41216-35TC |
35ns; 64K x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
196 |
GLT41316-35J4 |
35ns; 64M x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
197 |
GLT41316-35TC |
35ns; 64M x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
198 |
GLT4160L16-35J4 |
35ns; 1K x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
199 |
GLT44016-35TC |
35ns; 256k x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
200 |
GLT440L16-35J4 |
35ns; 256K x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
201 |
IC62C1024-35Q |
35ns; 5V; 128K x 8 high-speed CMOS static RAM |
ICSI |
202 |
IC62C1024-35QI |
35ns; 5V; 128K x 8 high-speed CMOS static RAM |
ICSI |
203 |
IC62C1024-35T |
35ns; 5V; 128K x 8 high-speed CMOS static RAM |
ICSI |
204 |
IC62C1024-35TI |
35ns; 5V; 128K x 8 high-speed CMOS static RAM |
ICSI |
205 |
IC62C1024-35W |
35ns; 5V; 128K x 8 high-speed CMOS static RAM |
ICSI |
206 |
IC62C1024-35WI |
35ns; 5V; 128K x 8 high-speed CMOS static RAM |
ICSI |
207 |
IC62C1024AL-35Q |
35ns; 5V; 128K x 8 low power CMOS static RAM |
ICSI |
208 |
IC62C1024AL-35QI |
35ns; 5V; 128K x 8 low power CMOS static RAM |
ICSI |
209 |
IC62C1024AL-35T |
35ns; 5V; 128K x 8 low power CMOS static RAM |
ICSI |
210 |
IC62C1024AL-35TI |
35ns; 5V; 128K x 8 low power CMOS static RAM |
ICSI |
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