| No. |
Part Name |
Description |
Manufacturer |
| 181 |
MAX2839ETN+T |
2.3GHz to 2.7GHz MIMO Wireless Broadband RF Transceiver |
MAXIM - Dallas Semiconductor |
| 182 |
MAX2842 |
3.3GHz to 3.9GHz MIMO Wireless Broadband RF Transceiver |
MAXIM - Dallas Semiconductor |
| 183 |
MAX2842-RD0222 |
3.3GHz to 3.9GHz MIMO Wireless Broadband RF Transceiver |
MAXIM - Dallas Semiconductor |
| 184 |
MAX2842ETN+ |
3.3GHz to 3.9GHz MIMO Wireless Broadband RF Transceiver |
MAXIM - Dallas Semiconductor |
| 185 |
MAX2842ETN+T |
3.3GHz to 3.9GHz MIMO Wireless Broadband RF Transceiver |
MAXIM - Dallas Semiconductor |
| 186 |
MAX2842EVKIT+ |
3.3GHz to 3.9GHz MIMO Wireless Broadband RF Transceiver |
MAXIM - Dallas Semiconductor |
| 187 |
MGFS45V2123 |
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET |
Mitsubishi Electric Corporation |
| 188 |
MRF2001 |
Application Note - 1-Watt, 2.3GHz amplifier |
Motorola |
| 189 |
MRW53502 |
Microwave Linear Power Transistor 1.6W 1-3GHz 7-8dB |
Motorola |
| 190 |
NEZ3642-4DD |
3.6GHz to 4.3GHz high output amplifier |
NEC |
| 191 |
NTE7108 |
Integrated Circuit 1.3GHz Phase Locked Loop w/I2C Bus |
NTE Electronics |
| 192 |
PKB3005U |
Microwave Power Transistor intended for use in militaru and professional applications up to 3GHz |
Philips |
| 193 |
PKB32001U |
Microwave Power Transistor for use in common-base class-B power amplifiers up to 3GHz |
Philips |
| 194 |
PKB32003U |
Microwave Power Transistor for use in common-base class-B power amplifiers up to 3GHz |
Philips |
| 195 |
PKB32005U |
Microwave Power Transistor for use in common-base class-B power amplifiers up to 3GHz |
Philips |
| 196 |
RCA-2N6268 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 197 |
RCA-2N6269 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 198 |
RCA-40898 |
6W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 199 |
RCA-40899 |
2W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 200 |
RCA2023-12 |
12.5W, 22V Broadband (2.0-to-2.3GHz) Emitter-Ballasted Transistor |
RCA Solid State |
| 201 |
RCA2310 |
10W, 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
| 202 |
RCA3001 |
1W 3GHz Emitter-Ballasted NPN RF Power Transistor |
RCA Solid State |
| 203 |
RCA3003 |
2.5W 3GHz Emitter-Ballasted NPN RF Power Transistor |
RCA Solid State |
| 204 |
RCA3005 |
4.5W 3GHz Emitter-Ballasted NPN RF Power Transistor |
RCA Solid State |
| 205 |
S1T8825B |
1.3GHZ DUAL PLL Data Sheet |
Samsung Electronic |
| 206 |
SA7016 |
1.3GHz low voltage fractional-N synthesizer |
Philips |
| 207 |
SA7026 |
1.3GHz low voltage fractional-N dual frequency synthesizer |
Philips |
| 208 |
SA7026DK |
1.3GHz low voltage fractional-N dual synthesizer. |
Philips |
| 209 |
SD1812 |
2.3GHz 2W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 210 |
SD1813 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| | | |
