| No. |
Part Name |
Description |
Manufacturer |
| 181 |
RCA-40898 |
6W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 182 |
RCA-40899 |
2W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 183 |
RCA2023-12 |
12.5W, 22V Broadband (2.0-to-2.3GHz) Emitter-Ballasted Transistor |
RCA Solid State |
| 184 |
RCA2310 |
10W, 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
| 185 |
RCA3001 |
1W 3GHz Emitter-Ballasted NPN RF Power Transistor |
RCA Solid State |
| 186 |
RCA3003 |
2.5W 3GHz Emitter-Ballasted NPN RF Power Transistor |
RCA Solid State |
| 187 |
RCA3005 |
4.5W 3GHz Emitter-Ballasted NPN RF Power Transistor |
RCA Solid State |
| 188 |
S1T8825B |
1.3GHZ DUAL PLL Data Sheet |
Samsung Electronic |
| 189 |
SA7016 |
1.3GHz low voltage fractional-N synthesizer |
Philips |
| 190 |
SA7026 |
1.3GHz low voltage fractional-N dual frequency synthesizer |
Philips |
| 191 |
SA7026DK |
1.3GHz low voltage fractional-N dual synthesizer. |
Philips |
| 192 |
SD1812 |
2.3GHz 2W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 193 |
SD1813 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 194 |
SD1814 |
2.3GHz 4W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 195 |
SD1817 |
2.3GHz 7W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 196 |
SD1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 197 |
SD1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 198 |
SD1842 |
2.3GHz 1.2W 21V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 199 |
SD1845 |
2.3GHz 0.5W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 200 |
SD1847 |
2.3GHz 1.5W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 201 |
SD1850 |
2.3GHz 0.2W 15V NPN silicon transistor designed for high gain linear performance at 2.0GHz |
SGS Thomson Microelectronics |
| 202 |
SD1862 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 203 |
SD1870 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 204 |
SD1879 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 205 |
SD1886 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 206 |
SD1887 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 207 |
SDA3202 |
V(cc): -0.3 to +6.0V; 1.3GHz PLL with I2C bus |
Infineon |
| 208 |
SI4136-BT |
ISM RF synthesizer with integrated VCOs for wireless communications. 2.5GHz/2.3GHz/IF out |
Silicon Laboratories |
| 209 |
SL2524 |
1.3GHz Dual Wideband Logarithmic Amplifier |
Mitel Semiconductor |
| 210 |
SL25241C |
1.3GHz Dual Wideband Logarithmic Amplifier |
Mitel Semiconductor |
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