No. |
Part Name |
Description |
Manufacturer |
181 |
SNJ54164W |
8-Bit Parallel-Out Serial Shift Registers |
Texas Instruments |
182 |
STK4164MK2 |
Features of the IMST Hybird ICs |
etc |
183 |
STK4164MK5 |
Features of the IMST Hybird ICs |
etc |
184 |
TMS416400 |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
Texas Instruments |
185 |
TMS416400-60DJ |
4194304-Word By 4-Bit High-Speed DRAMS |
Texas Instruments |
186 |
TMS416400-70DJ |
4194304-Word By 4-Bit High-Speed DRAMS |
Texas Instruments |
187 |
TMS416400P |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
Texas Instruments |
188 |
TMS416409A |
4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
National Semiconductor |
189 |
TMS416409ADGA-50 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 50ns |
National Semiconductor |
190 |
TMS416409ADGA-60 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 60ns |
National Semiconductor |
191 |
TMS416409ADGA-70 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 70ns |
National Semiconductor |
192 |
TMS416409ADJ-50 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 50ns |
National Semiconductor |
193 |
TMS416409ADJ-60 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 60ns |
National Semiconductor |
194 |
TMS416409ADJ-70 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 70ns |
National Semiconductor |
195 |
TMS664164 |
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
Texas Instruments |
196 |
TMS66416410 |
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
Texas Instruments |
197 |
TMS6641648 |
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
Texas Instruments |
198 |
TMS6641648A |
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
Texas Instruments |
199 |
UCY74164 |
Synchroniczny o�miobitowy rejestr przesuwny z wej�ciem szeregowym i wyj�ciami r�wnoleg�ymi |
Ultra CEMI |
200 |
VG36641641BT |
CMOS Synchronous Dynamic RAM |
Vanguard International Semiconductor |
201 |
VG36641641DT |
CMOS Synchronous Dynamic RAM |
etc |
202 |
VG36641641DT-6 |
CMOS Synchronous Dynamic RAM |
etc |
203 |
VG36641641DT-6 |
CMOS synchronous dynamic RAM |
Vanguard International Semiconductor |
204 |
VG36641641DT-7 |
CMOS Synchronous Dynamic RAM |
etc |
205 |
VG36641641DT-7 |
CMOS synchronous dynamic RAM |
Vanguard International Semiconductor |
206 |
VG36641641DT-7L |
CMOS Synchronous Dynamic RAM |
etc |
207 |
VG36641641DT-7L |
CMOS synchronous dynamic RAM |
Vanguard International Semiconductor |
208 |
VG36641641DT-8H |
CMOS Synchronous Dynamic RAM |
etc |
209 |
VG36641641DT-8H |
CMOS synchronous dynamic RAM |
Vanguard International Semiconductor |
210 |
VG36641641DTL-6 |
CMOS Synchronous Dynamic RAM |
etc |
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