No. |
Part Name |
Description |
Manufacturer |
181 |
LTN141XU |
Data Sheet |
Samsung Electronic |
182 |
MAX17041X+ |
Compact, Low-Cost 1S/2S Fuel Gauges |
MAXIM - Dallas Semiconductor |
183 |
MAX17041X+T10 |
Compact, Low-Cost 1S/2S Fuel Gauges |
MAXIM - Dallas Semiconductor |
184 |
MAX641XC/D |
Fixed Output 10W CMOS Step-Up Switching Regulators |
MAXIM - Dallas Semiconductor |
185 |
MAX641XCPA |
Fixed Output 10W CMOS Step-Up Switching Regulators |
MAXIM - Dallas Semiconductor |
186 |
MAX641XCSA |
Fixed Output 10W CMOS Step-Up Switching Regulators |
MAXIM - Dallas Semiconductor |
187 |
MAX641XEPA |
Fixed Output 10W CMOS Step-Up Switching Regulators |
MAXIM - Dallas Semiconductor |
188 |
MAX641XESA |
Fixed Output 10W CMOS Step-Up Switching Regulators |
MAXIM - Dallas Semiconductor |
189 |
MAX641XMJA |
Fixed Output 10W CMOS Step-Up Switching Regulators |
MAXIM - Dallas Semiconductor |
190 |
MAX6741XKLTD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
191 |
MAX6741XKLTD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
192 |
MAX6741XKLTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
193 |
MAX6741XKMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
194 |
MAX6741XKMSD3-T |
Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
195 |
MAX6741XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
196 |
MAX6741XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
197 |
MAX6741XKRHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
198 |
MAX6741XKRVD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
199 |
MAX6741XKRVD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
200 |
MAX6741XKRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
201 |
MAX6741XKRYD3-T |
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
202 |
MAX6741XKSDD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
203 |
MAX6741XKSDD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
204 |
MAX6741XKSDD3-T |
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
205 |
MAX6741XKSFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
206 |
MAX6741XKSHD3 |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
207 |
MAX6741XKSHD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
208 |
MAX6741XKSHD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
209 |
MAX6741XKSHD3-T |
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
210 |
MAX6741XKSVD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
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