| No. |
Part Name |
Description |
Manufacturer |
| 181 |
IRF452 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 182 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 183 |
IRF453 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 184 |
IRF453 |
Trans MOSFET 450V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 185 |
IRF734 |
450V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 186 |
IRF744 |
450V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 187 |
IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 188 |
IRF821 |
N-channel MOSFET, 450V, 2.5A |
SGS Thomson Microelectronics |
| 189 |
IRF821FI |
N-channel MOSFET, 450V, 2.0A |
SGS Thomson Microelectronics |
| 190 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 191 |
IRF823 |
N-channel MOSFET, 450V, 2.2A |
SGS Thomson Microelectronics |
| 192 |
IRF823FI |
N-channel MOSFET, 450V, 1.5A |
SGS Thomson Microelectronics |
| 193 |
IRF831 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 194 |
IRF831 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 195 |
IRF831 |
Trans MOSFET N-CH 450V 4.5A |
New Jersey Semiconductor |
| 196 |
IRF832 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 197 |
IRF833 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 198 |
IRF833 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 199 |
IRF833 |
Trans MOSFET N-CH 450V 4A |
New Jersey Semiconductor |
| 200 |
IRF841 |
N-channel HEXFET, 450V, 8A |
SGS Thomson Microelectronics |
| 201 |
IRF841F1 |
N-channel HEXFET, 450V, 4.5A |
SGS Thomson Microelectronics |
| 202 |
IRFI734 |
Power MOSFET(Vdss=450V/ Rds(on)=1.2ohm/ Id=3.4A) |
International Rectifier |
| 203 |
IRFI734G |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
| 204 |
IRFI744G |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
| 205 |
IRFI744GPBF |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
| 206 |
IRFP344 |
450V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 207 |
IRFP354 |
450V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 208 |
IRFP451FI |
Trans MOSFET 450V 13A 3-Pin(3+Tab) TO-3P |
New Jersey Semiconductor |
| 209 |
IRFP453 |
Trans MOSFET 450V 12A 3-Pin(3+Tab) TO-3P |
New Jersey Semiconductor |
| 210 |
ISL9V5045S_F085 |
EcoSPARK� N-Channel Ignition IGBT 500mJ, 450V |
Fairchild Semiconductor |
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