No. |
Part Name |
Description |
Manufacturer |
181 |
HYB3116400BTL-60 |
4M x 4bit EDO-DRAM |
Siemens |
182 |
HYB3164400ATL-40 |
16M x 4bit DRAM |
Siemens |
183 |
HYB3164400ATL-50 |
16M x 4bit DRAM |
Siemens |
184 |
HYB3164400ATL-60 |
16M x 4bit DRAM |
Siemens |
185 |
HYB3165400ATL-40 |
16M x 4bit DRAM |
Siemens |
186 |
HYB3165400ATL-50 |
16M x 4bit DRAM |
Siemens |
187 |
HYB3165400ATL-60 |
16M x 4bit DRAM |
Siemens |
188 |
HYB5116405BJ-700 |
4M x 4bit DRAM |
Siemens |
189 |
HYB5116405BT-500 |
4M x 4bit DRAM |
Siemens |
190 |
HYB5116405BT-600 |
4M x 4bit DRAM |
Siemens |
191 |
HYB5116405BT-700 |
4M x 4bit DRAM |
Siemens |
192 |
HYB5117400BJ-500 |
4M x 4bit DRAM |
Siemens |
193 |
HYB5117400BJ-600 |
4M x 4bit DRAM |
Siemens |
194 |
HYB5117400BJ-700 |
4M x 4bit DRAM |
Siemens |
195 |
HYB5117400BT-500 |
4M x 4bit DRAM |
Siemens |
196 |
HYB5117400BT-600 |
4M x 4bit DRAM |
Siemens |
197 |
HYB5117400BT-700 |
4M x 4bit DRAM |
Siemens |
198 |
HYB5117405BJ-500 |
4M x 4bit DRAM |
Siemens |
199 |
HYB5117405BJ-600 |
4M x 4bit DRAM |
Siemens |
200 |
HYB5117405BJ-700 |
4M x 4bit DRAM |
Siemens |
201 |
HYB5117405BT-500 |
4M x 4bit DRAM |
Siemens |
202 |
HYB5117405BT-600 |
4M x 4bit DRAM |
Siemens |
203 |
HYB5117405BT-700 |
4M x 4bit DRAM |
Siemens |
204 |
INA214BIDCKR |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125 |
Texas Instruments |
205 |
INA214BIDCKT |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125 |
Texas Instruments |
206 |
INA214BIRSWR |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 10-UQFN -40 to 125 |
Texas Instruments |
207 |
INA214BIRSWT |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 10-UQFN -40 to 125 |
Texas Instruments |
208 |
K4E16(7)0411(2)D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
209 |
K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
210 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
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