| No. |
Part Name |
Description |
Manufacturer |
| 181 |
M464S0824FTS |
8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
| 182 |
M464S0924BT1 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
| 183 |
M464S0924CT1 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
| 184 |
M464S0924CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
| 185 |
M464S0924CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet |
Samsung Electronic |
| 186 |
M464S0924DTS |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
| 187 |
M464S0924ETS |
64MB, 128MB Unbuffered SODIMM |
Samsung Electronic |
| 188 |
M464S0924ETS-C7A |
64MB, 128MB Unbuffered SODIMM |
Samsung Electronic |
| 189 |
M464S0924ETS-CL7A |
64MB, 128MB Unbuffered SODIMM |
Samsung Electronic |
| 190 |
M464S0924FTS |
144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC |
Samsung Electronic |
| 191 |
M464S0924FTS-C(L)7A |
144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC |
Samsung Electronic |
| 192 |
MT4S03A |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 193 |
MT4S03AU |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 194 |
MT4S03BU |
Radio-frequency bipolar transistor |
TOSHIBA |
| 195 |
MT4S04A |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 196 |
MT4S04AU |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 197 |
MT4S06 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 198 |
MT4S06U |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 199 |
MT4S07 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 200 |
N74S00 |
Quadruple 2-Input positive NAND gate |
Signetics |
| 201 |
N74S00A |
Quadruple 2-Input positive NAND gate |
Signetics |
| 202 |
N74S00F |
Quadruple 2-Input positive NAND gate |
Signetics |
| 203 |
N74S03 |
Quadruple 2-Input positive NAND gate |
Signetics |
| 204 |
N74S03A |
Quadruple 2-Input positive NAND gate |
Signetics |
| 205 |
N74S03F |
Quadruple 2-Input positive NAND gate |
Signetics |
| 206 |
N74S04 |
Hex inverter |
Signetics |
| 207 |
N74S04A |
Hex inverter |
Signetics |
| 208 |
N74S04F |
Hex inverter |
Signetics |
| 209 |
N74S04W |
Hex inverter |
Signetics |
| 210 |
N74S05 |
Hex inverter |
Signetics |
| | | |
