| No. |
Part Name |
Description |
Manufacturer |
| 181 |
IP1R18AK-12-883B |
5.0A, 12V Positive Voltage Regulator |
SemeLAB |
| 182 |
IP1R18AK-15-883B |
5.0A, 15V Positive Voltage Regulator |
SemeLAB |
| 183 |
IP1R18K-05-883B |
5.0A, 5V Positive Voltage Regulator |
SemeLAB |
| 184 |
IP1R18K-12-883B |
5.0A, 12V Positive Voltage Regulator |
SemeLAB |
| 185 |
IP1R18K-15-883B |
5.0A, 15V Positive Voltage Regulator |
SemeLAB |
| 186 |
IP1R19AK-05-883B |
5.0A, 5V Negative Voltage Regulator |
SemeLAB |
| 187 |
IP1R19AK-12-883B |
5.0A, 12V Negative Voltage Regulator |
SemeLAB |
| 188 |
IP1R19K-05-883B |
5.0A, 5V Negative Voltage Regulator |
SemeLAB |
| 189 |
IP1R19K-12-883B |
5.0A, 12V Negative Voltage Regulator |
SemeLAB |
| 190 |
IP338AK |
5.0A Adjustable Positive Voltage Regulator |
SemeLAB |
| 191 |
IP338AV |
5.0A Adjustable Positive Voltage Regulator |
SemeLAB |
| 192 |
IP338K |
5.0A Adjustable Positive Voltage Regulator |
SemeLAB |
| 193 |
IP338V |
5.0A Adjustable Positive Voltage Regulator |
SemeLAB |
| 194 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 195 |
IRF220 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 196 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 197 |
IRF221 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 198 |
IRF222 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 199 |
IRF223 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 200 |
IRF351 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 201 |
IRF352 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 202 |
IRF353 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 203 |
IRF620 |
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 204 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 205 |
IRF620 |
5.0A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET |
Intersil |
| 206 |
IRF621 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 207 |
IRF830L |
HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
International Rectifier |
| 208 |
IRFF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. |
General Electric Solid State |
| 209 |
IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. |
General Electric Solid State |
| 210 |
IRG4PH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) |
International Rectifier |
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