| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N5524B |
Diode Zener Single 5.6V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 182 |
1N5524B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| 183 |
1N5524B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 184 |
1N5524B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 185 |
1N5524B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 186 |
1N5524BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 187 |
1N5524BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 188 |
1N5524C |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 189 |
1N5524C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 190 |
1N5524C |
Diode Zener Single 5.6V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 191 |
1N5524C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 192 |
1N5524C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 193 |
1N5524CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 194 |
1N5524CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 195 |
1N5524D |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 196 |
1N5524D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 197 |
1N5524D |
Diode Zener Single 5.6V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 198 |
1N5524D-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 199 |
1N5524D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 200 |
1N5524DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 201 |
1N5524DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 202 |
1N5525 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 203 |
1N5525 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 204 |
1N5525 |
Low Voltage Avalanche Zener |
Microsemi |
| 205 |
1N5525 |
Diode Zener Single 6.2V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 206 |
1N5525A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 6.2 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 207 |
1N5525A |
Low Voltage Avalanche Zener |
Microsemi |
| 208 |
1N5525A |
Diode Zener Single 6.2V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 209 |
1N5525A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 210 |
1N5525A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| | | |
