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Datasheets for 56

Datasheets found :: 15200
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 28LV256SM-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
182 28LV256SM-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
183 28LV256TC-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
184 28LV256TC-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
185 28LV256TC-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
186 28LV256TC-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
187 28LV256TI-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
188 28LV256TI-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
189 28LV256TI-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
190 28LV256TI-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
191 28LV256TM-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
192 28LV256TM-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
193 28LV256TM-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
194 28LV256TM-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
195 29F002 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory Advanced Micro Devices
196 29F020 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory Advanced Micro Devices
197 2SC1656 NPN Silicon High Speed Switching Transistor (This datasheet of NE98108 is also the datasheet of 2SC1656 Grd C, see the Electrical Characteristics table) NEC
198 2V035 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 56 V @ 1mA DC test current. NTE Electronics
199 5082-5501-00000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)
200 5082-5501-0E000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)
201 5082-5501-0F000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)
202 5082-5501-0G000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)
203 5082-5501-0H000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)
204 5082-5501-0I000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)
205 5082-5501-0J000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)
206 5082-5501-0K000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)
207 5082-5501-E0000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)
208 5082-5501-EE000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)
209 5082-5501-EF000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)
210 5082-5501-EG000 14.2 mm (0.56 inch) Seven Segment Displays Agilent (Hewlett-Packard)


Datasheets found :: 15200
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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