No. |
Part Name |
Description |
Manufacturer |
181 |
1SMB5956A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
182 |
1SMB5956A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 200 V. +-10% tolerance. |
Motorola |
183 |
1V5KE56A |
Transient Voltage Suppressors |
Fairchild Semiconductor |
184 |
1ZC56A |
ZENER DIODE 1W CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES |
TOSHIBA |
185 |
20KP256A |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
186 |
20KP56A |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
187 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
188 |
27C256A12A |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
189 |
27C256A12D |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
190 |
27C256A12FA |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
191 |
27C256A12N |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
192 |
27C256A15A |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
193 |
27C256A15D |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
194 |
27C256A15FA |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
195 |
27C256A15N |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
196 |
27C256A20A |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
197 |
27C256A20D |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
198 |
27C256A20FA |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
199 |
27C256A20N |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
200 |
28C256AJC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
201 |
28C256AJC-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
202 |
28C256AJC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
203 |
28C256AJC-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
204 |
28C256AJC-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
205 |
28C256AJC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
206 |
28C256AJC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
207 |
28C256AJC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
208 |
28C256AJI-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
209 |
28C256AJI-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
210 |
28C256AJI-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
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