| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N3057A |
NPN Transistor |
Microsemi |
| 182 |
2N3057A |
Silicon NPN Transistor |
Motorola |
| 183 |
2N3057A |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
| 184 |
2N3057A |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
| 185 |
2N357A |
Germanium NPN Transistor |
Motorola |
| 186 |
2N457A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 187 |
2N457A |
Germanium PNP Transistor |
Motorola |
| 188 |
2N457A |
BJT |
New Jersey Semiconductor |
| 189 |
2N457A |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 190 |
2N4857A |
Leaded JFET General Purpose |
Central Semiconductor |
| 191 |
2N4857A |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 192 |
2N4857A |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 193 |
2N4857A |
JFET SWITCHING N-CHANNEL-DEPLETION |
Motorola |
| 194 |
2N4857A |
N-Channel FETs |
National Semiconductor |
| 195 |
2N4857A |
Trans JFET N-CH 40V 3-Pin TO-18 |
New Jersey Semiconductor |
| 196 |
2N4857A |
Switch |
Vishay |
| 197 |
2N657A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 198 |
2N657A |
Silicon NPN Transistor |
Motorola |
| 199 |
2N657A |
BJT |
New Jersey Semiconductor |
| 200 |
2N757A |
Silicon NPN Transistor |
Motorola |
| 201 |
2N757A |
Small Signal Planar NPN Silicon Transistor |
Transitron Electronic |
| 202 |
2SA657A |
Silicon PNP triple diffused MAS type power transistor |
TOSHIBA |
| 203 |
2SD1257A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 204 |
2SD1457A |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 205 |
2SD1457A |
Silicon NPN Power Transistors TO-3PFa package |
Savantic |
| 206 |
2SD1857A |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 207 |
2SD857A |
Si NPN triple diffused planar. AF power amplifier. |
Panasonic |
| 208 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 209 |
3N157A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 210 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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