| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2CK48A |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 182 |
2CK48B |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 183 |
2MBI200N-060-03 |
600V / 200A 2 in one-package |
Fuji Electric |
| 184 |
2MBI300N-060-04 |
IGBT module |
Fuji Electric |
| 185 |
2MBI300NB-060-01 |
600V / 300A 2 in one-package |
Fuji Electric |
| 186 |
2MBI400N-060-01 |
IGBT(600V / 400A) |
Fuji Electric |
| 187 |
2MBI400NT-060-02 |
IGBT module |
Fuji Electric |
| 188 |
2MBI400NT-060-0201 |
IGBT module |
Fuji Electric |
| 189 |
2N5060-D |
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors |
ON Semiconductor |
| 190 |
2N5460-D |
JFET Amplifiers P-Channel - Depletion |
ON Semiconductor |
| 191 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
| 192 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 193 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 194 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 195 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 196 |
2N6660 |
N-Channel 60-V (D-S) Single and Quad MOSFETs |
Vishay |
| 197 |
2N7002 |
N-Channel 60-V MOSFET |
Vishay |
| 198 |
2N7002E |
N-Channel 60-V MOSFET |
Vishay |
| 199 |
2N7002K |
N-Channel 60-V (D-S) MOSFET |
Vishay |
| 200 |
2SB1260-P |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 201 |
2SB1260-Q |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 202 |
2SB1260-R |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 203 |
2SC3360-L |
Silicon transistor |
NEC |
| 204 |
2SC3360-T1B |
Silicon transistor |
NEC |
| 205 |
2SC3360-T2B |
Silicon transistor |
NEC |
| 206 |
2SJ460-T/JM |
Pch D-MOSFET SST 50V/0.1A |
NEC |
| 207 |
2SK1960-T1 |
N Channel enhancement MOS FET |
NEC |
| 208 |
2SK1960-T2 |
N Channel enhancement MOS FET |
NEC |
| 209 |
2SK2360-Z |
N-channel enhancement type DMOS |
NEC |
| 210 |
2SK2760-01 |
N-channel MOS-FET |
Fuji Electric |
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