No. |
Part Name |
Description |
Manufacturer |
181 |
2N6045 |
Leaded Power Transistor Darlington |
Central Semiconductor |
182 |
2N6045 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
183 |
2N6045 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
184 |
2N6045 |
POWER TRANSISTORS(10A,80W) |
MOSPEC Semiconductor |
185 |
2N6045 |
Darlington 8A plastic complementary medium-power NPN 75W transistor |
Motorola |
186 |
2N6045 |
Trans Darlington NPN 100V 10A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
187 |
2N6045 |
Power 8A 100V Darlington NPN |
ON Semiconductor |
188 |
2N6045 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
189 |
2N6046 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
190 |
2N6047 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
191 |
2N6048 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
192 |
2N6049 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
193 |
2N6049 |
4 AMPERE POWER TRANSISTOR PNP SILICON |
Motorola |
194 |
2N6049 |
Trans GP BJT PNP 55V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
195 |
2N6049 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
196 |
2N6049 |
Silicon PNP Power Transistor, TO-66 package, NPN Complement 2N3054A |
Silicon Transistor Corporation |
197 |
2N6604 |
NPN silicon high frequency transistor NF=2.7dB - 1.0GHz |
Motorola |
198 |
2SB1604 |
Trans GP BJT PNP 20V 10A |
New Jersey Semiconductor |
199 |
2SB1604 |
Silicon PNP epitaxial planar type(For low-voltage switching) |
Panasonic |
200 |
2SB1604 |
Silicon PNP Power Transistors TO-220F package |
Savantic |
201 |
2SB1604A |
Silicon PNP epitaxial planar type(For low-voltage switching) |
Panasonic |
202 |
2SB1604A |
Silicon PNP Power Transistors TO-220F package |
Savantic |
203 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
204 |
2SC3604 |
Trans GP BJT NPN 10V 0.065A 4-Pin Micro-X |
New Jersey Semiconductor |
205 |
2SC4604 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
206 |
2SC6043 |
Bipolar Transistor, 50V, 2A, Low VCE(sat) NPN Single MP |
ON Semiconductor |
207 |
2SC6045 |
Silicon NPN epitaxial planar type |
Panasonic |
208 |
2SC6045G |
Silicon NPN epitaxial planar type |
Panasonic |
209 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
210 |
2SD1604 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104 |
Hitachi Semiconductor |
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