No. |
Part Name |
Description |
Manufacturer |
181 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
182 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
183 |
2N6105 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
184 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
185 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
186 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
187 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
188 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
189 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
190 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
191 |
2N6105A |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
192 |
2N6106 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
193 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
194 |
2N6106 |
Trans GP BJT PNP 70V 7A 3-Pin(3+Tab) TO-213AA |
New Jersey Semiconductor |
195 |
2N6106 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
196 |
2N6107 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
197 |
2N6107 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
198 |
2N6107 |
40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
199 |
2N6107 |
PNP power transistor |
FERRANTI |
200 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
201 |
2N6107 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
202 |
2N6107 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
203 |
2N6107 |
7A complementary silicon plastic 65W power PNP transistor |
Motorola |
204 |
2N6107 |
Trans GP BJT PNP 70V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
205 |
2N6107 |
Power 7A 70V Discrete PNP |
ON Semiconductor |
206 |
2N6107 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
207 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
208 |
2N6107 |
SILICON PNP SWITCHING TRANSISTORS |
SGS Thomson Microelectronics |
209 |
2N6107 |
SILICON PNP SWITCHING TRANSISTORS |
SGS Thomson Microelectronics |
210 |
2N6107 |
SILICON PNP SWITCHING TRANSISTORS |
ST Microelectronics |
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