No. |
Part Name |
Description |
Manufacturer |
181 |
KM416C1000BT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
182 |
KM416C1000BT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
183 |
KM416C1000BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
184 |
KM416C1000BTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
185 |
KM416C1000BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
186 |
KM416C1000BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
187 |
KM416C1000C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
188 |
KM416C1000CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
189 |
KM416C1000CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
190 |
KM416C1000CJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
191 |
KM416C1000CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
192 |
KM416C1000CT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
193 |
KM416C1000CT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
194 |
KM416C1000CTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
195 |
KM416C1000CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
196 |
KM416C1004BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
197 |
KM416C1004BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
198 |
KM416C1004BJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
199 |
KM416C1004BJ-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
200 |
KM416C1004BJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
201 |
KM416C1004BJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
202 |
KM416C1004BJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
203 |
KM416C1004BJ-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
204 |
KM416C1004BT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
205 |
KM416C1004BT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
206 |
KM416C1004BT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
207 |
KM416C1004BT-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
208 |
KM416C1004BT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
209 |
KM416C1004BT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
210 |
KM416C1004BT-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
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