| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N6070A |
Transient Voltage Suppressor |
Microsemi |
| 182 |
1N6070A |
Diode TVS Single Bi-Dir 160V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 183 |
1N6070AE3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 184 |
1N6170A |
Transient Voltage Suppressor |
Microsemi |
| 185 |
1N6170A |
Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 186 |
1N6170A |
QPL 1500 Watt Axial Leaded TVS |
Semtech |
| 187 |
1N6170Ae3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 188 |
1N6170AUS |
Transient Voltage Suppressor |
Microsemi |
| 189 |
1N6170AUSe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 190 |
1N6270A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 191 |
1N6270A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 192 |
1N6270A |
9.1 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 193 |
1N6270A |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 194 |
1N6270A |
Transient Voltage Suppressor |
Microsemi |
| 195 |
1N6270A |
Diode TVS Single Uni-Dir 7.78V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 196 |
1N6270A |
Zener 9.1V 1500W 5% |
ON Semiconductor |
| 197 |
1N6270A |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 198 |
1N6270A |
TRANSZORB�Transient Voltage Suppressors |
Vishay |
| 199 |
1N6270AC |
Diode TVS Single Uni-Dir 7.78V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 200 |
1N6270AE3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 201 |
1N6270ARL4 |
Zener 9.1V 1500W 5% |
ON Semiconductor |
| 202 |
1N6304 |
Diode Switching 50V 70A 2-Pin DO-5 |
New Jersey Semiconductor |
| 203 |
1N6305 |
Diode Switching 100V 70A 2-Pin DO-5 |
New Jersey Semiconductor |
| 204 |
1N6305A |
Diode Switching 100V 70A 2-Pin DO-5 |
New Jersey Semiconductor |
| 205 |
1N6306 |
Diode Switching 150V 70A 2-Pin DO-5 |
New Jersey Semiconductor |
| 206 |
1N6376 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 207 |
1N6384 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 208 |
1N70A |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 209 |
1N70A |
Germanium Signal diode |
Motorola |
| 210 |
1N70A |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
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