No. |
Part Name |
Description |
Manufacturer |
181 |
IDT71P74104S167BQ |
1.8V 2M x 9 QDR II PipeLined SRAM |
IDT |
182 |
IDT71P74104S167BQ8 |
1.8V 2M x 9 QDR II PipeLined SRAM |
IDT |
183 |
IDT71P74104S200BQ |
1.8V 2M x 9 QDR II PipeLined SRAM |
IDT |
184 |
IDT71P74104S200BQ8 |
1.8V 2M x 9 QDR II PipeLined SRAM |
IDT |
185 |
IDT71P74104S250BQ |
1.8V 2M x 9 QDR II PipeLined SRAM |
IDT |
186 |
IDT71P74104S250BQ8 |
1.8V 2M x 9 QDR II PipeLined SRAM |
IDT |
187 |
IDT71P74104S300BQ |
1.8V 2M x 9 QDR II PipeLined SRAM |
IDT |
188 |
IDT71P74104S300BQ8 |
1.8V 2M x 9 QDR II PipeLined SRAM |
IDT |
189 |
IDT71P74104S333BQ |
1.8V 2M x 9 QDR II PipeLined SRAM |
IDT |
190 |
IDT71P74104S333BQ8 |
1.8V 2M x 9 QDR II PipeLined SRAM |
IDT |
191 |
IDT71P74204 |
1.8V 2M x 8 QDR II Pipelined SRAM |
IDT |
192 |
IDT71P74604 |
1.8V 512K x 36 QDR II PipeLined SRAM |
IDT |
193 |
IDT71P74604S167BQ |
1.8V 512K x 36 QDR II PipeLined SRAM |
IDT |
194 |
IDT71P74604S200BQ |
1.8V 512K x 36 QDR II PipeLined SRAM |
IDT |
195 |
IDT71P74604S250BQ |
1.8V 512K x 36 QDR II PipeLined SRAM |
IDT |
196 |
IDT71P74604S300BQ |
1.8V 512K x 36 QDR II PipeLined SRAM |
IDT |
197 |
IDT71P74604S333BQ |
1.8V 512K x 36 QDR II PipeLined SRAM |
IDT |
198 |
IDT71P74804 |
1.8V 1M x 18 QDR II PipeLined SRAM |
IDT |
199 |
IDT71P74804S167BQ |
1.8V 1M x 18 QDR II PipeLined SRAM |
IDT |
200 |
IDT71P74804S200BQ |
1.8V 1M x 18 QDR II PipeLined SRAM |
IDT |
201 |
IDT71P74804S250BQ |
1.8V 1M x 18 QDR II PipeLined SRAM |
IDT |
202 |
IDT71P74804S300BQ |
1.8V 1M x 18 QDR II PipeLined SRAM |
IDT |
203 |
IDT71P74804S333BQ |
1.8V 1M x 18 QDR II PipeLined SRAM |
IDT |
204 |
IR21571PBF |
Ballast Control IC |
International Rectifier |
205 |
KDA0471PL-50 |
50MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
206 |
KDA0471PL-66 |
66MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
207 |
KDA0471PL-80 |
80MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
208 |
KT871P15 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches |
Optek Technology |
209 |
KT871P51 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches |
Optek Technology |
210 |
KT871P55 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches |
Optek Technology |
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