| No. |
Part Name |
Description |
Manufacturer |
| 181 |
LPC1777FBD208 |
512kB flash, 96kB SRAM, USB, LQFP208 package |
NXP Semiconductors |
| 182 |
LT1777 |
Low Noise Step-Down Switching Regulator |
Linear Technology |
| 183 |
LT1777C |
Low Noise Step-Down Switching Regulator |
Linear Technology |
| 184 |
LT1777CS |
Low Noise Step-Down Switching Regulator |
Linear Technology |
| 185 |
LT1777CS#PBF |
Low Noise Step-Down Switching Regulator |
Linear Technology |
| 186 |
LT1777CS#TR |
Low Noise Step-Down Switching Regulator |
Linear Technology |
| 187 |
LT1777CS#TRPBF |
Low Noise Step-Down Switching Regulator |
Linear Technology |
| 188 |
LT1777I |
Low Noise Step-Down Switching Regulator |
Linear Technology |
| 189 |
LT1777IS |
Low Noise Step-Down Switching Regulator |
Linear Technology |
| 190 |
LT1777IS#PBF |
Low Noise Step-Down Switching Regulator |
Linear Technology |
| 191 |
LT1777IS#TR |
Low Noise Step-Down Switching Regulator |
Linear Technology |
| 192 |
LT1777IS#TRPBF |
Low Noise Step-Down Switching Regulator |
Linear Technology |
| 193 |
M57774 |
185-200MHz / 12.5V / 30W / FM MOBILE RADIO |
Mitsubishi Electric Corporation |
| 194 |
M57774S |
185-200 Mhz 12.5V, 30W, FM Mobile Radio |
Mitsubishi Electric Corporation |
| 195 |
M57775 |
RF Power Module - 806-866MHz, 8V, 400mW, FM mobile radio |
Mitsubishi Electric Corporation |
| 196 |
M57776 |
RF Power Module - 889-915MHz, 8V, 300mW, FM mobile radio |
Mitsubishi Electric Corporation |
| 197 |
M5M29GB |
16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 198 |
M5M29GB160BVP |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 199 |
M5M29GB160BVP-80 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 200 |
M5M29GB160BWG |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 201 |
M5M29GB161BVP |
16777216-bit CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 202 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 203 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 204 |
M5M29GT160BVP |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 205 |
M5M29GT160BVP-80 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 206 |
M5M29GT160BWG |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 207 |
M5M29GT161BVP |
16777216-bit CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 208 |
M5M29GT161BVP-80 |
16777216-bit CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 209 |
M5M29GT161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 210 |
M5M29GT161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
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