| No. |
Part Name |
Description |
Manufacturer |
| 181 |
GIB2402 |
Dual Ultrafast Plastic Rectifier, Forward Current 8.0A |
Vishay |
| 182 |
GIB2403 |
Dual Ultrafast Plastic Rectifier, Forward Current 8.0A |
Vishay |
| 183 |
GIB2404 |
Dual Ultrafast Plastic Rectifier, Forward Current 8.0A |
Vishay |
| 184 |
HSMCJ8.0A |
Transient Voltage Suppressor |
Microsemi |
| 185 |
IRF120 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 186 |
IRF121 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 187 |
IRF122 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 188 |
IRF123 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 189 |
IRF230 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 190 |
IRF231 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 191 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 192 |
IRF232 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 193 |
IRF233 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 194 |
IRF233 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 195 |
IRF632 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 196 |
IRF633 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 197 |
IRF742 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 8.0A |
Siliconix |
| 198 |
IRF743 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 8.0A |
Siliconix |
| 199 |
IRFF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. |
General Electric Solid State |
| 200 |
IRFF130 |
8.0A/ 100V/ 0.180 Ohm/ N-Channel Power MOSFET |
Intersil |
| 201 |
IRFF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. |
General Electric Solid State |
| 202 |
IRGBC20M-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A) |
International Rectifier |
| 203 |
IRGBC20MD2-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A) |
International Rectifier |
| 204 |
KBJ8A |
8.0A BRIDGE RECTIFIER |
Won-Top Electronics |
| 205 |
KBJ8B |
8.0A BRIDGE RECTIFIER |
Won-Top Electronics |
| 206 |
KBJ8D |
8.0A BRIDGE RECTIFIER |
Won-Top Electronics |
| 207 |
KBJ8G |
8.0A BRIDGE RECTIFIER |
Won-Top Electronics |
| 208 |
KBJ8J |
8.0A BRIDGE RECTIFIER |
Won-Top Electronics |
| 209 |
KBJ8K |
8.0A BRIDGE RECTIFIER |
Won-Top Electronics |
| 210 |
KBJ8M |
8.0A BRIDGE RECTIFIER |
Won-Top Electronics |
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