| No. |
Part Name |
Description |
Manufacturer |
| 181 |
HCF4085M013TR |
DUAL 2-WIDE 2-INPUT AND-OR-INVERTER GATE |
SGS Thomson Microelectronics |
| 182 |
HCF4085M013TR |
DUAL 2-WIDE 2-INPUT AND-OR-INVERTER GATE |
ST Microelectronics |
| 183 |
HCF4585M013TR |
4-BIT MAGNITUDE COMPARATOR |
SGS Thomson Microelectronics |
| 184 |
HCF4585M013TR |
4-BIT MAGNITUDE COMPARATOR |
ST Microelectronics |
| 185 |
HCTS85MS |
Comparator, Digital, Magnitude, 4-Bit, TTL Inputs, Rad-Hard, High-Speed, CMOS, Logic |
Intersil |
| 186 |
HMC485MS8G |
HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 1.7 - 2.2 GHz |
Hittite Microwave Corporation |
| 187 |
HSMU-A400-U85M1 |
HSMU-A400-U85M1 · Surface Mount LED Indicator |
Agilent (Hewlett-Packard) |
| 188 |
HSMU-A400-U85M1 |
HSMU-A400-U85M1 · Surface Mount LED Indicator |
Agilent (Hewlett-Packard) |
| 189 |
IRF6785MTRPBF |
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 190 |
IS62LV25616LL-85M |
256K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 191 |
IS62LV25616LL-85MI |
256K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 192 |
IS62VV25616L-85M |
256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 193 |
IS62VV25616L-85MI |
256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 194 |
IS62VV25616LL-85M |
256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 195 |
IS62VV25616LL-85MI |
256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 196 |
IS62VV51216LL-85M |
512K x 16 low voltage, 1.8V ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 197 |
IS62VV51216LL-85MI |
512K x 16 low voltage, 1.8V ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 198 |
K7Z327285M |
512Kx72-Bit DLW(Double Late Write) RAM Data Sheet |
Samsung Electronic |
| 199 |
KFM85M |
Celluar Phone |
Korea Electronics (KEC) |
| 200 |
KM44C256C-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 201 |
KM44C256C-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 202 |
KM44C256C-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 203 |
KM44C256CL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 204 |
KM44C256CL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 205 |
KM44C256CL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 206 |
KM44C256CSL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 207 |
KM44C256CSL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 208 |
KM44C256CSL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 209 |
KM44C256D-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 210 |
KRC285M |
Built in Bias Resistor |
Korea Electronics (KEC) |
| | | |
