| No. |
Part Name |
Description |
Manufacturer |
| 181 |
IDT5T929-10NLI |
Precision Clock Generator OC-48 Applicatins |
IDT |
| 182 |
IDT5T929-10NLI8 |
Precision Clock Generator OC-48 Applicatins |
IDT |
| 183 |
LH5P8129-10 |
CMOS 1M(128K x 8)CS-control pseudo-static RAM |
SHARP |
| 184 |
LT1019-10 |
Precision Reference |
Linear Technology |
| 185 |
LT1789-10 |
Micropower, Single Supply Rail-to-Rail Output Instrumentation Amplifier |
Linear Technology |
| 186 |
LT1999-10 |
High Voltage, Bidirectional Current Sense Amplifier |
Linear Technology |
| 187 |
LTC1329-10 |
Micropower 8-Bit Current Output D/A Converter |
Linear Technology |
| 188 |
LTC6269-10 |
Dual 4GHz Ultra-Low Bias Current FET Input Op Amp |
Linear Technology |
| 189 |
M48Z09-100PC1 |
CMOS 8K x 8 ZEROPOWER SRAM |
ST Microelectronics |
| 190 |
M48Z19-100PC1 |
CMOS 8K x 8 ZEROPOWER SRAM |
ST Microelectronics |
| 191 |
MA4P789-1068T |
75 V, Surface mount plastic PIN diode |
MA-Com |
| 192 |
MA4P789-1068T |
Surface Mount Plastic PIN Diodes |
Tyco Electronics |
| 193 |
MAC229-10 |
TRIACs 8 AMPERES RMS 200 thru 800 VOLTS |
Motorola |
| 194 |
MAC229-10 |
Thyristor TRIAC 600V 80A 3-Pin(3+Tab) TO-220 Full-Pak Box |
New Jersey Semiconductor |
| 195 |
MAC229-10FP |
TRIACs 8 AMPERES RMS 200 thru 800 VOLTS |
Motorola |
| 196 |
MB84VD2009-10 |
8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
Fujitsu Microelectronics |
| 197 |
MCR729-10 |
Fast-switching, high-voltage silicon controlled rectifiers especially designed and characterized for radar, proximity fuse, beacon and similar pulse applications |
Motorola |
| 198 |
MCR729-10 |
SILICON CONTROLLED RECTIFIERS |
Motorola |
| 199 |
MCR729-10 |
Thyristor SCR 100V 100A 3-Pin(3+Tab) TO-220AB Box |
New Jersey Semiconductor |
| 200 |
P4C149-10PC |
10 ns,Static CMOS RAM, 1 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 201 |
PH1819-10 |
1780-1900 MHz,10 W, wireless bipolar power transistor |
MA-Com |
| 202 |
PH1819-10 |
Wireless Bipolar Power Transistor, 1 OW 1.78 - 1.90 GHz |
Tyco Electronics |
| 203 |
PSMN009-100B |
N-channel TrenchMOS SiliconMAX standard level FET |
Nexperia |
| 204 |
PSMN009-100B |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
| 205 |
PSMN009-100B |
N-channel enhancement mode field-effect transistor |
Philips |
| 206 |
PSMN009-100P |
N-channel TrenchMOS SiliconMAX standard level FET |
Nexperia |
| 207 |
PSMN009-100P |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
| 208 |
PSMN009-100P |
N-channel enhancement mode field-effect transistor |
Philips |
| 209 |
PSMN009-100W |
N-channel TrenchMOS transistor |
Philips |
| 210 |
PSMN009-100W |
TrenchMOS transistor |
Philips |
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