No. |
Part Name |
Description |
Manufacturer |
181 |
2SC4030 |
NPN Triple Diffused Planar Silicon Transistor 900V/50mA Switching Applications |
SANYO |
182 |
2SC4031 |
NPN Triple Diffused Planar Silicon Transistor 900V/20mA Switching Applications |
SANYO |
183 |
2SC4578 |
NPN Triple Diffused Planar Silicon Transistor 900V/50mA Switching Applications |
SANYO |
184 |
2SC4579 |
NPN Triple Diffused Planar Silicon Transistor 900V/20mA Switching Applications |
SANYO |
185 |
2SC4630LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
186 |
2SC4631LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
187 |
2SC4900 |
Silicon NPN Transistor |
Hitachi Semiconductor |
188 |
2SC4900 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
189 |
2SC5900 |
SILICON TRANSISTOR |
SANYO |
190 |
2SC900 |
LOW FREQUENCY, LOW NOISE AMPLIFIER |
USHA India LTD |
191 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
192 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
ST Microelectronics |
193 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
194 |
2SD811 |
Silicon NPN triple diffused high power, high voltage (900V) switching transistor |
TOSHIBA |
195 |
2SD900B |
SILICON NPN TRIPLE DIFFUSED TV HORIZONTAL DEFLECTION OUTPUT |
Unknow |
196 |
2SK1358 |
Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
197 |
2SK1900 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
198 |
2SK2484 |
Nch power MOSFET MP-25 900V/5A |
NEC |
199 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
200 |
2SK2900 |
N CHANNEL MOSFET |
Fuji Electric |
201 |
2SK2900-01 |
N CHANNEL MOSFET |
Fuji Electric |
202 |
2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
203 |
2SK3078 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
204 |
2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
205 |
2SK3900 |
SWITCHING N-CHANNEL POWER MOSFET |
NEC |
206 |
2SK3900-ZP |
SWITCHING N-CHANNEL POWER MOSFET |
NEC |
207 |
2SK900 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
208 |
3032 |
90 CROSSOVER HYBRID COUPLER 800-900,890-960, OR 1700-1900 MHZ |
Tyco Electronics |
209 |
3032 |
90 CROSSOVER HYBRID COUPLER 800-900,890-960, OR 1700-1900 MHZ |
Tyco Electronics |
210 |
3032-6017-00 |
800-900 MHz, 3dB, 90 crossover hybrid coupler |
MA-Com |
| | | |