| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SC3538 |
Class C, 900MHz 28V power transistor (This datasheet of NEM094081B-28 is also the datasheet of 2SC3538, see the Electrical Characteristics table) |
NEC |
| 182 |
2SC3539 |
Class C, 900MHz 28V power transistor (This datasheet of NEM096081B-28 is also the datasheet of 2SC3539, see the Electrical Characteristics table) |
NEC |
| 183 |
2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 |
Isahaya Electronics Corporation |
| 184 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
| 185 |
2SC3675 |
NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications |
SANYO |
| 186 |
2SC3676 |
NPN Triple Diffused Planar Silicon Transistor 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications |
SANYO |
| 187 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
| 188 |
2SC3900 |
Switching Applications |
SANYO |
| 189 |
2SC4030 |
NPN Triple Diffused Planar Silicon Transistor 900V/50mA Switching Applications |
SANYO |
| 190 |
2SC4031 |
NPN Triple Diffused Planar Silicon Transistor 900V/20mA Switching Applications |
SANYO |
| 191 |
2SC4578 |
NPN Triple Diffused Planar Silicon Transistor 900V/50mA Switching Applications |
SANYO |
| 192 |
2SC4579 |
NPN Triple Diffused Planar Silicon Transistor 900V/20mA Switching Applications |
SANYO |
| 193 |
2SC4630LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 194 |
2SC4631LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 195 |
2SC4900 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 196 |
2SC4900 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 197 |
2SC5900 |
SILICON TRANSISTOR |
SANYO |
| 198 |
2SC900 |
LOW FREQUENCY, LOW NOISE AMPLIFIER |
USHA India LTD |
| 199 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
| 200 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
ST Microelectronics |
| 201 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 202 |
2SD811 |
Silicon NPN triple diffused high power, high voltage (900V) switching transistor |
TOSHIBA |
| 203 |
2SD900B |
SILICON NPN TRIPLE DIFFUSED TV HORIZONTAL DEFLECTION OUTPUT |
Unknow |
| 204 |
2SK1358 |
Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
| 205 |
2SK1900 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 206 |
2SK2484 |
Nch power MOSFET MP-25 900V/5A |
NEC |
| 207 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 208 |
2SK2900 |
N CHANNEL MOSFET |
Fuji Electric |
| 209 |
2SK2900-01 |
N CHANNEL MOSFET |
Fuji Electric |
| 210 |
2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
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