| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N3906_J18Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 182 |
2N3906_J25Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 183 |
2N3906_J61Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 184 |
2N4906 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Central Semiconductor |
| 185 |
2N4906 |
PNP power transistor |
Motorola |
| 186 |
2N4906 |
Silicon PNP Transistor |
Motorola |
| 187 |
2N4906 |
PNP Power Transistor TO-3 |
National Semiconductor |
| 188 |
2N4906 |
Trans GP BJT PNP 80V 5A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 189 |
2N4906 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
| 190 |
2N4906 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 191 |
2N4906 |
Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N4915 |
Silicon Transistor Corporation |
| 192 |
2N4915 |
Silicon NPN Power Transistor, TO-3 package, PNP Complement 2N4906 |
Silicon Transistor Corporation |
| 193 |
2N5906 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 194 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 195 |
2N5906 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
| 196 |
2N5906 |
Trans JFET N-CH 7-Pin TO-78 |
New Jersey Semiconductor |
| 197 |
2N906 |
Silicon NPN Transistor |
Motorola |
| 198 |
2SB906 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS). AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 199 |
2SC1906 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 200 |
2SC1906 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 201 |
2SC3906K |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 202 |
2SC3906KFRA |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 203 |
2SC3906KFRAT146 |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 204 |
2SC3906KT146 |
NPN General Purpose Amplification Transistor |
ROHM |
| 205 |
2SC5906 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 206 |
2SD1906 |
NPN Epitaxial Planar Type Silicon Transistors High-Current Switching Applications |
SANYO |
| 207 |
2SK1906 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 208 |
2SK2906-01 |
N-channel MOS-FET |
Fuji Electric |
| 209 |
2SK906 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 210 |
42109 |
OPERATIONAL AMPLIFIER DSCC DWG #5962-9065901 |
Micropac Industries |
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