No. |
Part Name |
Description |
Manufacturer |
181 |
2N4937 |
Dual PNP silicon annular transistor |
Motorola |
182 |
2N4937 |
Silicon PNP Transistor |
Motorola |
183 |
2N4937 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
184 |
2N5937 |
1.5 Watt hermetically sealed glass silicon zener diode 33V |
Motorola |
185 |
2N5937 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
186 |
2N5937 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
187 |
2N937 |
Silicon PNP Transistor |
Motorola |
188 |
2N937 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
189 |
2N937 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
190 |
2SA1526 |
NPN Switching Transistor (R1 = 10 k937;, R2 = 10 kΩ) |
ON Semiconductor |
191 |
2SA1526 |
NPN Switching Transistor (R1 = 10 k937;, R2 = 10 kΩ) |
ON Semiconductor |
192 |
2SA1937 |
Transistor Silicon PNP Triple Diffused Type High Voltage Switching Applications |
TOSHIBA |
193 |
2SA937 |
EPITAXIAL PLANAR PNP SILICON TRANSISTORS |
ROHM |
194 |
2SA937M |
PNP SILICON TRANSISTOR |
ROHM |
195 |
2SB0937 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
196 |
2SB0937A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
197 |
2SB937 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
198 |
2SB937A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
199 |
2SC2937 |
Silicon NPN Power Transistors TO-247 package |
Savantic |
200 |
2SC3937 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
201 |
2SC3937G |
Silicon NPN epitaxial planar type |
Panasonic |
202 |
2SC937 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Horizontal Deflection Output |
Hitachi Semiconductor |
203 |
2SC937 |
TRANSLESS TV HORIZONTAL DEFLECTION OUTPUT |
Unknow |
204 |
2SD1937 |
For low-frequency amplification |
Panasonic |
205 |
2SK1937-01 |
N-channel MOS-FET |
Fuji Electric |
206 |
2SK2937 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
207 |
2SK2937 |
Transistors>Switching/MOSFETs |
Renesas |
208 |
2SK937 |
N-Channel Junction Silicon FET High-Frequency General-Purpose Amplifier Applications |
SANYO |
209 |
3SMAJ5937B |
ZENER DIODES |
Micro Commercial Components |
210 |
3SMBJ5937B |
ZENER DIODES |
Micro Commercial Components |
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