| No. |
Part Name |
Description |
Manufacturer |
| 181 |
LN9R05NS |
Opto Electronic Devices |
Panasonic |
| 182 |
PRN10016N39R0J |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 183 |
PRN10016N39R0JR |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 184 |
PRN10016N39R0JT |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 185 |
PRN1101639R0J |
Isolated resistor termination network |
California Micro Devices Corp |
| 186 |
PRN11016N39R0J |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 187 |
PRN11016N39R0JR |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 188 |
PRN11016N39R0JT |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 189 |
PRN1102439R0J |
Isolated resistor termination network |
California Micro Devices Corp |
| 190 |
PRN11024N39R0J |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 191 |
PRN11024N39R0JR |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 192 |
PRN11024N39R0JT |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 193 |
PSMN9R0-25MLC |
N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology |
Nexperia |
| 194 |
PSMN9R0-25MLC |
N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology |
NXP Semiconductors |
| 195 |
PSMN9R0-25YLC |
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology |
NXP Semiconductors |
| 196 |
PSMN9R0-30LL |
N-channel DFN3333-8 30 V 9 mΩ logic level MOSFET |
Nexperia |
| 197 |
PSMN9R0-30LL |
N-channel DFN3333-8 30 V 9 mΩ logic level MOSFET |
NXP Semiconductors |
| 198 |
PSMN9R0-30YL |
N-channel 30 V 8 mΩ logic level MOSFET in LFPAK |
NXP Semiconductors |
| 199 |
UT69R00012FCA |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish solder. Total dose none. |
Aeroflex Circuit Technology |
| 200 |
UT69R00012FCAF |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 201 |
UT69R00012FCAG |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish solder. Total dose 5E5 rads(Si). |
Aeroflex Circuit Technology |
| 202 |
UT69R00012FCAH |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish solder. Total dose 1E6 rads(Si). |
Aeroflex Circuit Technology |
| 203 |
UT69R00012FCAR |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish solder. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 204 |
UT69R00012FCC |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 205 |
UT69R00012FCCF |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 206 |
UT69R00012FCCG |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish gold. Total dose 5E5 rads(Si). |
Aeroflex Circuit Technology |
| 207 |
UT69R00012FCCH |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish gold. Total dose 1E6 rads(Si). |
Aeroflex Circuit Technology |
| 208 |
UT69R00012FCCR |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish gold. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 209 |
UT69R00012FCX |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish optional. Total dose none. |
Aeroflex Circuit Technology |
| 210 |
UT69R00012FCXF |
RadHard microcontroller. 12 MHz operating frequency. Mil temp. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| | | |
