No. |
Part Name |
Description |
Manufacturer |
181 |
1N5820 |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
182 |
1N5820-T3 |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
183 |
1N5820-TB |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
184 |
1N5821 |
3.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Bytes |
185 |
1N5821 |
3.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
186 |
1N5821 |
3.0AMP. SCHOTTKY BARRIER RECTIFIERS |
Jinan Gude Electronic Device |
187 |
1N5821 |
3.0A, 30V ultra fast recovery rectifier |
MCC |
188 |
1N5821 |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
189 |
1N5821-T3 |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
190 |
1N5821-TB |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
191 |
1N5822 |
3.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Bytes |
192 |
1N5822 |
3.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
193 |
1N5822 |
3.0AMP. SCHOTTKY BARRIER RECTIFIERS |
Jinan Gude Electronic Device |
194 |
1N5822 |
3.0A, 40V ultra fast recovery rectifier |
MCC |
195 |
1N5822 |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
196 |
1N5822-T3 |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
197 |
1N5822-TB |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
198 |
1N6616 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
199 |
1N6617 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
200 |
1N6618 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
201 |
1N6619 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
202 |
1N746 |
3.3 V, 400 mW silicon linear diode |
BKC International Electronics |
203 |
1N746A |
3.3 V, 400 mW silicon linear diode |
BKC International Electronics |
204 |
1N746A_T50A |
3.3V, 0.5W Zener Diode |
Fairchild Semiconductor |
205 |
1N746A_T50R |
3.3V, 0.5W Zener Diode |
Fairchild Semiconductor |
206 |
1N746B |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
207 |
1N746C |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
208 |
1N746D |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
209 |
1N747 |
3.6 V, 400 mW silicon linear diode |
BKC International Electronics |
210 |
1N747A |
3.6 V, 400 mW silicon linear diode |
BKC International Electronics |
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