| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1PMT5936BT1 |
30V 3.2W Zener Diode |
ON Semiconductor |
| 182 |
1PMT5936BT3 |
30V 3.2W Zener Diode |
ON Semiconductor |
| 183 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 184 |
1SMA4751 |
30 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 185 |
1SMB5936 |
30 V, 1.5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 186 |
1SMC5363 |
30 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 187 |
20BQ030 |
30V 2A Schottky Discrete Diode in a SMB package |
International Rectifier |
| 188 |
20BQ030TR |
30V 2A Schottky Discrete Diode in a SMB package |
International Rectifier |
| 189 |
20CJQ030 |
30V 2A Schottky Common Cathode Diode in a SOT-223 package |
International Rectifier |
| 190 |
20CJQ030TR |
30V 2A Schottky Common Cathode Diode in a SOT-223 package |
International Rectifier |
| 191 |
20CTH03 |
300V 20A HyperFast Discrete Diode in a TO-220AB package |
International Rectifier |
| 192 |
20CTH03-1 |
300V 20A HyperFast Discrete Diode in a TO-262 package |
International Rectifier |
| 193 |
20CTH03FP |
300V 20A HyperFast Discrete Diode in a TO-220 FullPack package |
International Rectifier |
| 194 |
20CTH03S |
300V 20A HyperFast Discrete Diode in a D2-Pak package |
International Rectifier |
| 195 |
20KW300 |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 196 |
20KW300A |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 197 |
220CMQ030 |
30V 220A Schottky Common Cathode Diode in a TO-244AB Isolated package |
International Rectifier |
| 198 |
220CNQ030 |
30V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
| 199 |
22GQ100 |
30V 100A Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
| 200 |
22GQ100SCS |
30A 100V Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
| 201 |
22JGQ045 |
30A 45V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N6660CAT1 |
International Rectifier |
| 202 |
22JGQ045SCV |
30A 45V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N6660CAT1 |
International Rectifier |
| 203 |
22JGQ045SCX |
30A 45V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N6660CAT1 |
International Rectifier |
| 204 |
242NQ030 |
30V 240A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 205 |
242NQ030R |
30V 240A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
| 206 |
2N1598 |
300V Silicon thyristor |
Comset Semiconductors |
| 207 |
2N2219 |
30V (2N2219) 50V (2N2219A, 2N2219AL), 800mA NPN Small Signal Transistor |
ON Semiconductor |
| 208 |
2N2530N3 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 209 |
2N2530N8 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 210 |
2N2646 |
30V Silicon unijonction transistor |
Comset Semiconductors |
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