| No. |
Part Name |
Description |
Manufacturer |
| 181 |
5KP120A |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 182 |
5KP130 |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 183 |
5KP130A |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 184 |
5KP150 |
150.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 185 |
5KP150A |
150.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 186 |
5KP160 |
160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 187 |
5KP160A |
160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 188 |
5KP170 |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 189 |
5KP170A |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 190 |
5KP180 |
180.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 191 |
5KP180A |
180.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 192 |
AN-284 |
MDTL integrated circuit shift registers - Application Note |
Motorola |
| 193 |
AN1485 |
MDMESH(TM) PERFORMANCE EVALUATION IN A CONTINUOUS MODE PFC BOOST CONVERTER |
SGS Thomson Microelectronics |
| 194 |
LA9605W |
MD Player RF and Matrix Signal-Processing IC |
SANYO |
| 195 |
MAX-100 |
91.8V; 20A ;144KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 196 |
MAX-200 |
181.8V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 197 |
MAX-225 |
202.5V; 20A ;324KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 198 |
MAX-260 |
234.5V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 199 |
MAX-370 |
333V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 200 |
MAX-422 |
379.8V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 201 |
MAX-450 |
405.8V; 20A ;648KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 202 |
MAX-470 |
423V; 20A ;648KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 203 |
MAX20-100.0C |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 204 |
MAX20-100.0CA |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 205 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 206 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 207 |
MAX20-120.0C |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 208 |
MAX20-120.0CA |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 209 |
MAX20-130.0C |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 210 |
MAX20-130.0CA |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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