| No. |
Part Name |
Description |
Manufacturer |
| 181 |
G5853-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 182 |
G5853-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 183 |
G5853-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 184 |
G6742 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 185 |
G6742-003 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 186 |
G6742-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 187 |
G6849 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 188 |
G6849-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 189 |
G6854-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 190 |
G7150 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 191 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
| 192 |
G7151-16 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 193 |
G7871 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 194 |
G7871-02 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 195 |
G7881 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
Hamamatsu Corporation |
| 196 |
G7881-21 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 197 |
G7881-22 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 198 |
G7881-23 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 199 |
G7881-32 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 200 |
G7881-44 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 201 |
G8194 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 202 |
G8194-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 203 |
G8194-22 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 204 |
G8194-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 205 |
G8194-32 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 206 |
G8194-44 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 207 |
G8195 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 208 |
G8195-11 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 209 |
G8195-12 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 210 |
G8195-21 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
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