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Datasheets for ABR

Datasheets found :: 1856
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No. Part Name Description Manufacturer
181 ADG333ABRS Quad SPDT Switch Analog Devices
182 ADG431ABR LC2MOS Precision Quad SPST Switches Analog Devices
183 ADG432ABR LC2MOS Precision Quad SPST Switches Analog Devices
184 ADG433ABR LC2MOS Precision Quad SPST Switches Analog Devices
185 ADG511ABR LC2MOS Precision 5 V/3 V Quad SPST Switches Analog Devices
186 ADG511ABR-REEL ±5V, 30 Ohm, Quad SPST (4NC) Switch Analog Devices
187 ADG511ABR-REEL7 ±5V, 30 Ohm, Quad SPST (4NC) Switch Analog Devices
188 ADG512ABR LC2MOS Precision 5 V/3 V Quad SPST Switches Analog Devices
189 ADG512ABR-REEL LC2MOS Precision 5V/3V Quad SPST Switches Analog Devices
190 ADG512ABR-REEL7 LC2MOS Precision 5V/3V Quad SPST Switches Analog Devices
191 ADG513ABR LC2MOS Precision 5 V/3 V Quad SPST Switches Analog Devices
192 ADG774ABRQ Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time Analog Devices
193 AFS434S3 SMD 434.0MHz SAW FILTER ABRACON CORPORATION
194 ASI30291 SILICON HYPERABRUPT VARACTOR DIODE Advanced Semiconductor
195 ASIDKV6520-12 SILICON HYPERABRUPT VARACTOR DIODE Advanced Semiconductor
196 ASIDKV6522 SILICON HYPERABRUPT TUNING VARACTOR DIODE Advanced Semiconductor
197 ASIKV2801 SILICON HYPERABRUPT TUNING VARACTOR Advanced Semiconductor
198 ASIMV1401 SILICON HYPERABRUPT VARACTOR DIODE Advanced Semiconductor
199 ASIMV1863D SILICON ABRUPT TUNING VARACTOR DIODE Advanced Semiconductor
200 ASIS3028 SILICON ABRUPT VARACTOR DIODE Advanced Semiconductor
201 ATL25 The ATL25 series gate array and embedded array families from Atmel are fabricated on a 0.25 micron CMOS process with 5 levels of metal. This family features arrays with up to 6.9 million routable gates and 976 pins. The high density and hi Atmel
202 ATL35 The ATL35 series ASIC family is fabricated on a 0.35 micron CMOS process with up to four levels of metal. This family features arrays with up to 2.7 million routable gates and 976 pins. The high density and high pin count capabilities of t Atmel
203 ATL60 The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools. Atmel
204 BBY24-BBY27 Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) Siemens
205 BBY24-S1 Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) Siemens
206 BBY25-S1 Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) Siemens
207 BBY26-S1 Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) Siemens
208 BBY27-S2 Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) Siemens
209 BBY31 Hyperabrupt varactor diode-Not recommended for new designs Zetex Semiconductors
210 BBY33DA-2 Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) Siemens


Datasheets found :: 1856
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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