No. |
Part Name |
Description |
Manufacturer |
181 |
1N5539 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
182 |
1N5539B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
183 |
1N5539B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
184 |
1N5540 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
185 |
1N5540B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
186 |
1N5540B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
187 |
1N5541 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
188 |
1N5541B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
189 |
1N5541B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
190 |
1N5542 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
191 |
1N5542B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
192 |
1N5542B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
193 |
1N5543 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
194 |
1N5543B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
195 |
1N5543B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
196 |
1N5544 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
197 |
1N5544B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
198 |
1N5544B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
199 |
1N5545 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
200 |
1N5545B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
201 |
1N5545B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
202 |
1N5546 |
Nom zener voltage:33.0V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage |
Knox Semiconductor Inc |
203 |
1N5546B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
204 |
1N5546B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
205 |
1N6082 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
206 |
1N6083 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
207 |
1N6084 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
208 |
1N6085 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
209 |
1N6086 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
210 |
1N6087 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
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