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Datasheets for ASAB

Datasheets found :: 2114
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 27C128 128K (16K x 8) CMOS UV Erasable PROM General Semiconductor
182 27C16 16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified National Semiconductor
183 27C16Q450 16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified National Semiconductor
184 27C16Q550 16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified National Semiconductor
185 27C16Q883 16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified National Semiconductor
186 27C256 256K CMOS UV Erasable PROM (32K X 8) General Semiconductor
187 27C256 262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified National Semiconductor
188 27C256 256K CMOS UV Erasable PROM (32K X 8) Philips
189 27C256E250_883 262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns National Semiconductor
190 27C256E300_883 262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns National Semiconductor
191 27C256E350_883 262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns National Semiconductor
192 27C256Q250_883 262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns National Semiconductor
193 27C256Q300_883 262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns National Semiconductor
194 27C256Q350_883 262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns National Semiconductor
195 27C4096 256K X 16 ELECTRICALLY ERASABLE EPROM Winbond Electronics
196 27C64 65,536-Bit (8,192 x 8) UV Erasable CMOS PROM Military Qualified National Semiconductor
197 27E040T-12 512K*8 bits high speed, low power electrically erasable EPROM Winbond Electronics
198 28C256AJC-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
199 28C256AJC-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
200 28C256AJC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
201 28C256AJC-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
202 28C256AJC-3 High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
203 28C256AJC-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
204 28C256AJC-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
205 28C256AJC-4 High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
206 28C256AJI-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
207 28C256AJI-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
208 28C256AJI-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
209 28C256AJI-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
210 28C256AJI-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC


Datasheets found :: 2114
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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