| No. |
Part Name |
Description |
Manufacturer |
| 181 |
MAX16036LLB29+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 182 |
MAX16036LLB29+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 183 |
MAX16036PLB29+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 184 |
MAX16036PLB29+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 185 |
MAX16125WTDB29+ |
Dual Pushbutton Controllers in Tiny 6-Bump WLP Package |
MAXIM - Dallas Semiconductor |
| 186 |
MAX16125WTDB29+T |
Dual Pushbutton Controllers in Tiny 6-Bump WLP Package |
MAXIM - Dallas Semiconductor |
| 187 |
MTB29N15E |
TMOS POWER FET 29 AMPERES 150 VOLTS |
Motorola |
| 188 |
MTB29N15E |
Power MOSFET 29 Amps, 150 Volts |
ON Semiconductor |
| 189 |
MTB29N15E-D |
Power MOSFET 29 Amps, 150 Volts N-Channel D2PAK |
ON Semiconductor |
| 190 |
MTB29N15ET4 |
Power MOSFET 29 Amps, 150 Volts |
ON Semiconductor |
| 191 |
NB2969A |
Low Power, Reduced EMI Clock Synthesizer |
ON Semiconductor |
| 192 |
NX8562LB295-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. Anode ground. FC-PC connector. |
NEC |
| 193 |
NX8563LB295-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. FC-PC connector. Anode ground. |
NEC |
| 194 |
PAM3101DAB290 |
300mA HIGH PSRR LOW-DROPOUT CMOS LINEAR REGULATOR |
Diodes |
| 195 |
PHB29N08T |
N-channel TrenchMOS standard level FET |
Nexperia |
| 196 |
PHB29N08T |
N-channel TrenchMOS standard level FET |
NXP Semiconductors |
| 197 |
PHB29N08T |
TrenchMOS(tm) standard level FET |
Philips |
| 198 |
PJB296C |
2.5 V, +/-100 ppm, differential positive ECL fast edge crystal clock oscillator |
NEL Frequency Controls |
| 199 |
PMPB29XNE |
30 V, single N-channel Trench MOSFET |
Nexperia |
| 200 |
PMPB29XNE |
30 V, single N-channel Trench MOSFET |
NXP Semiconductors |
| 201 |
PMPB29XNEA |
30 V, N-channel Trench MOSFET |
Nexperia |
| 202 |
PMPB29XPE |
20 V, single P-channel Trench MOSFET |
Nexperia |
| 203 |
PMPB29XPE |
20 V, single P-channel Trench MOSFET |
NXP Semiconductors |
| 204 |
PMPB29XPEA |
20 V, P-channel Trench MOSFET |
Nexperia |
| 205 |
PMZB290UN |
20 V, single N-channel Trench MOSFET |
Nexperia |
| 206 |
PMZB290UN |
20 V, single N-channel Trench MOSFET |
NXP Semiconductors |
| 207 |
PMZB290UNE |
20 V, single N-channel Trench MOSFET |
Nexperia |
| 208 |
PMZB290UNE |
20 V, single N-channel Trench MOSFET |
NXP Semiconductors |
| 209 |
PMZB290UNE2 |
20 V, N-channel Trench MOSFET |
Nexperia |
| 210 |
RB298NS100 |
Schottky Barrier Diode |
ROHM |
| | | |
