| No. |
Part Name |
Description |
Manufacturer |
| 181 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 182 |
1214-110M |
Pulsed Power L-Band (Si) |
Microsemi |
| 183 |
1214-110V |
Pulsed Power L-Band (Si) |
Microsemi |
| 184 |
1214-150L |
Pulsed Power L-Band (Si) |
Microsemi |
| 185 |
1214-220M |
Pulsed Power L-Band (Si) |
Microsemi |
| 186 |
1214-30 |
Pulsed Power L-Band (Si) |
Microsemi |
| 187 |
1214-300 |
Pulsed Power L-Band (Si) |
Microsemi |
| 188 |
1214-300M |
Pulsed Power L-Band (Si) |
Microsemi |
| 189 |
1214-300V |
Pulsed Power L-Band (Si) |
Microsemi |
| 190 |
1214-32L |
Pulsed Power L-Band (Si) |
Microsemi |
| 191 |
1214-370M |
Pulsed Power L-Band (Si) |
Microsemi |
| 192 |
1214-370V |
Pulsed Power L-Band (Si) |
Microsemi |
| 193 |
1214-55 |
Pulsed Power L-Band (Si) |
Microsemi |
| 194 |
1214-550P |
Pulsed Power L-Band (Si) |
Microsemi |
| 195 |
1214-700P |
Pulsed Power L-Band (Si) |
Microsemi |
| 196 |
1214-700P1 |
Pulsed Power L-Band (Si) |
Microsemi |
| 197 |
1214-800P |
Pulsed Power L-Band (Si) |
Microsemi |
| 198 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
| 199 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 200 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 201 |
1307028 |
Dipole Antenna for ISM Band |
Tyco Electronics |
| 202 |
1307031 |
2.4 GHz Patch Antenna for ISM Band |
Tyco Electronics |
| 203 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 204 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 205 |
1617-35 |
Pulsed Power L-Band (Si) |
Microsemi |
| 206 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 207 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 208 |
1A255 |
High-Performance LED(Baseband Video) |
Mitel Semiconductor |
| 209 |
1A277A |
High-Performance LED(FM and Baseband Video) |
Mitel Semiconductor |
| 210 |
1A284 |
High-Performance LED(Baseband Video) |
Mitel Semiconductor |
| | | |
