| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BD908 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 182 |
BD909 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 183 |
BD910 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 184 |
BD911 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 185 |
BD912 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 186 |
BDW21 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 187 |
BDW21A |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 188 |
BDW21B |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 189 |
BDW21C |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 190 |
BDW22A |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 191 |
BDW22B |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 192 |
BDW22C |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 193 |
BDW51 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 194 |
BDW51A |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 195 |
BDW51B |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 196 |
BDW51C |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 197 |
BDW52 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 198 |
BDW52A |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 199 |
BDW52B |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 200 |
BDW52C |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 201 |
CM10MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 202 |
CM10MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 203 |
CM15MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 204 |
CM15MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 205 |
CM20MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 206 |
CM20MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 207 |
CM30MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 208 |
CM30MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 209 |
CM50MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 210 |
DB433 |
NPN SILICON EPIBASE TRANSISTORS |
Siemens |
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