No. |
Part Name |
Description |
Manufacturer |
181 |
STL105NS3LLH7 |
N-channel 30 V, 0.0032 Ohm typ., 27 A STripFET(TM) VII DeepGATE(TM) Power MOSFETs plus monolithic Schottky in a PowerFLAT(TM) 5x6 |
ST Microelectronics |
182 |
STL110NS3LLH7 |
N-channel 30 V, 0.0027 Ohm typ., 28 A STripFET(TM) VII DeepGATE(TM) Power MOSFETs plus monolithic Schottky in a PowerFLAT(TM) 5x6 |
ST Microelectronics |
183 |
STL160NS3LLH7 |
N-channel 30 V, 0.0016 Ohm typ., 160 A STripFET H7 Power MOSFETs plus monolithic Schottky in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
184 |
STL23NS3LLH7 |
N-channel 30 V, 0.0027 Ohm typ., 23 A STripFET(TM) VII DeepGATE(TM) Power MOSFET plus monolithic Schottky in a PowerFLAT(TM) 3.3 x 3.3 |
ST Microelectronics |
185 |
THS5641A |
8-Bit, 100 MSPS, CommsDAC(TM) DAC Scalable Current Outputs between 2mA to 20mA |
Texas Instruments |
186 |
THS5641AIDWG4 |
8-Bit, 100 MSPS, CommsDAC(TM) DAC Scalable Current Outputs between 2mA to 20mA 28-SOIC -40 to 85 |
Texas Instruments |
187 |
THS5641AIPWG4 |
8-Bit, 100 MSPS, CommsDAC(TM) DAC Scalable Current Outputs between 2mA to 20mA 28-TSSOP -40 to 85 |
Texas Instruments |
188 |
THS5641AIPWRG4 |
8-Bit, 100 MSPS, CommsDAC(TM) DAC Scalable Current Outputs between 2mA to 20mA 28-TSSOP -40 to 85 |
Texas Instruments |
189 |
TRS10A65C |
SiC Schottky barrier diode |
TOSHIBA |
190 |
TRS10E65C |
SiC Schottky barrier diode |
TOSHIBA |
191 |
TRS12A65C |
SiC Schottky barrier diode |
TOSHIBA |
192 |
TRS12E65C |
SiC Schottky barrier diode |
TOSHIBA |
193 |
TRS12N65D |
SiC Schottky barrier diode |
TOSHIBA |
194 |
TRS16N65D |
SiC Schottky barrier diode |
TOSHIBA |
195 |
TRS20N65D |
SiC Schottky barrier diode |
TOSHIBA |
196 |
TRS24N65D |
SiC Schottky barrier diode |
TOSHIBA |
197 |
TRS6A65C |
SiC Schottky barrier diode |
TOSHIBA |
198 |
TRS6E65C |
SiC Schottky barrier diode |
TOSHIBA |
199 |
TRS8A65C |
SiC Schottky barrier diode |
TOSHIBA |
200 |
TRS8E65C |
SiC Schottky barrier diode |
TOSHIBA |
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