| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 182 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 183 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 184 |
2N3867 |
Planar transistor for switching applications |
SGS-ATES |
| 185 |
2N3868 |
Planar transistor for switching applications |
SGS-ATES |
| 186 |
2N3906 |
PNP Silicon Transistor (General small signal application Switching application) |
AUK Corp |
| 187 |
2N3959 |
NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications |
Motorola |
| 188 |
2N3960 |
NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications |
Motorola |
| 189 |
2N4233A |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 190 |
2N4895 |
Planar transistor for switching applications |
SGS-ATES |
| 191 |
2N4896 |
Planar transistor for switching applications |
SGS-ATES |
| 192 |
2N4897 |
Planar transistor for switching applications |
SGS-ATES |
| 193 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
| 194 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 195 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 196 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 197 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 198 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 199 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 200 |
2N5336 |
Planar transistor for switching applications |
SGS-ATES |
| 201 |
2N5338 |
Planar transistor for switching applications |
SGS-ATES |
| 202 |
2N5339 |
Planar transistor for switching applications |
SGS-ATES |
| 203 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 204 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 205 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 206 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 207 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 208 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 209 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 210 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| | | |
