No. |
Part Name |
Description |
Manufacturer |
181 |
CS18M |
Leaded Thyristor SCR |
Central Semiconductor |
182 |
CS18MZ |
Leaded Thyristor SCR |
Central Semiconductor |
183 |
CS18N |
Leaded Thyristor SCR |
Central Semiconductor |
184 |
CS18NZ |
Leaded Thyristor SCR |
Central Semiconductor |
185 |
CX77301 |
PA Module for Dual-band EGSM900/DCS1800 and GPRS Applications |
Skyworks Solutions |
186 |
CX77304-16 |
PA Module for Tri-band EGSM900 DCS1800 PCS1900 / GPRS |
Skyworks Solutions |
187 |
CX77304-17 |
PAM for Tri-band EGSM900 DCS1800 PCS1900 / GPRS |
Skyworks Solutions |
188 |
CX77314 |
PAM for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS |
Skyworks Solutions |
189 |
CX77315 |
PAM for Quad-band GSM850/900 DCS1800 PCS1900/ GPRS/ iPAC Technology |
Skyworks Solutions |
190 |
CXG1047FN |
Dual-Band 3V Power Amplifier for GSM900/DCS1800 |
SONY |
191 |
E2081606_PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
Renesas |
192 |
GM71CS18163ALJ-6 |
1,048,576 words x 16 bit DRAM, 60ns, low power |
LG Semiconductor |
193 |
GM71CS18163ALJ-7 |
1,048,576 words x 16 bit DRAM, 70ns, low power |
LG Semiconductor |
194 |
GM71CS18163ALJ-8 |
1,048,576 words x 16 bit DRAM, 80ns, low power |
LG Semiconductor |
195 |
GM71CS18163ALT-6 |
1,048,576 words x 16 bit DRAM, 60ns, low power |
LG Semiconductor |
196 |
GM71CS18163ALT-7 |
1,048,576 words x 16 bit DRAM, 70ns, low power |
LG Semiconductor |
197 |
GM71CS18163ALT-8 |
1,048,576 words x 16 bit DRAM, 80ns, low power |
LG Semiconductor |
198 |
GM71CS18163CLJ-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns, low power |
Hynix Semiconductor |
199 |
GM71CS18163CLJ-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
200 |
GM71CS18163CLJ-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
201 |
GM71CS18163CLT-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns, low power |
Hynix Semiconductor |
202 |
GM71CS18163CLT-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
203 |
GM71CS18163CLT-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
204 |
GP800DCS18 |
Chopper Switch IGBT Module |
Dynex Semiconductor |
205 |
GP801DCS18 |
Chopper Switch Low VCESAT IGBT Module |
Dynex Semiconductor |
206 |
GSM900 |
Triple-band VCO for GSM900/DCS1800/PCS1900 |
National Semiconductor |
207 |
ICS1886 |
FDDI / Fast Ethernet PHYceiverTM |
Integrated Circuit Systems |
208 |
ICS1886M |
FDDI / Fast Ethernet PHYceiverTM |
Integrated Circuit Systems |
209 |
ICS1887 |
FDDI / Fast Ethernet PHYceiverTM |
Integrated Circuit Systems |
210 |
ICS1887M |
FDDI / Fast Ethernet PHYceiverTM |
Integrated Circuit Systems |
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