| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BAV10 |
High speed diode for core gating applications in very fast memories |
Mullard |
| 182 |
BAV10 |
Ultra High Speed Diode |
Philips |
| 183 |
BAV10 |
High-speed diode |
Philips |
| 184 |
BAV105 |
High-speed diode |
Philips |
| 185 |
BAV70 |
Diodes > JEDEC Standard & Euro Standard Diodes > Surface mounting type |
ROHM |
| 186 |
BAV99 |
Diodes > JEDEC Standard & Euro Standard Diodes > Surface mounting type |
ROHM |
| 187 |
BAV99S |
Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package) |
Siemens |
| 188 |
BAV99U |
Diodes > JEDEC Standard & Euro Standard Diodes > Surface mounting type |
ROHM |
| 189 |
BAW100 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
| 190 |
BAW101 |
General Purpose Diodes - Silicon Switching Diode Array with medium-speed diodes |
Infineon |
| 191 |
BAW101 |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
Siemens |
| 192 |
BAW56 |
Diodes > JEDEC Standard & Euro Standard Diodes > Surface mounting type |
ROHM |
| 193 |
BAW62 |
High speed diode for fast logic applications |
Mullard |
| 194 |
BAW62 |
High-speed diode |
Philips |
| 195 |
BAX13 |
Silicon whiskerless diode, high speed diode intended for logic application |
Mullard |
| 196 |
BAX13 |
Silicon Oxide Passivated Diode |
Philips |
| 197 |
BAX15 |
Silicon Oxide Passivated Diode |
Philips |
| 198 |
BAX16 |
Silicon Oxide Passivated Diode |
Philips |
| 199 |
BAX17 |
Silicon Oxide Passivated Diode |
Philips |
| 200 |
BAX18 |
Silicon Oxide Passivated Diode |
Philips |
| 201 |
BAX280 |
FRED Diode (VRRM 1000 V IFRMS 5.5 A 55 ns Soft recovery characteristics) |
Siemens |
| 202 |
BSM150GB120DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 203 |
BSM150GB170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 204 |
BSM300GA120DN2E3166 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 205 |
BSM300GA170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 206 |
BSM35GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 207 |
BULD125KC |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
| 208 |
BULD125KC |
600 V, NPN silicon transistor with integrated diode |
TRANSYS Electronics Limited |
| 209 |
BULD125KC |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
TRSYS |
| 210 |
BULD25 |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
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