| No. |
Part Name |
Description |
Manufacturer |
| 181 |
HR11-9BPD-6P |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 182 |
HR11-9BPD-6S |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 183 |
HR11-9BRD-6P |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 184 |
HR11-9BRD-6S |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 185 |
HYM324000GD-60 |
4M x 32 Bit DRAM Module (SO-DIMM) |
Infineon |
| 186 |
HYM324000GD-60 |
4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
Siemens |
| 187 |
HYM328000GD-60 |
8M x 32 Bit DRAM Module (SO-DIMM) |
Infineon |
| 188 |
HYM328000GD-60 |
8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
Siemens |
| 189 |
HYM328020GD-60 |
8M x 32 Bit DRAM Module (SO-DIMM) |
Infineon |
| 190 |
HYM328020GD-60 |
8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
Siemens |
| 191 |
HYM64V2005GCD-60 |
2M x 64 Bit EDO DRAM Module (SO-DIMM)... |
Infineon |
| 192 |
HYM64V4005GCD-60 |
4M x 64 Bit EDO DRAM Module (SO-DIMM)... |
Infineon |
| 193 |
IC61SF25632D-6.5B |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 194 |
IC61SF25632D-6.5BI |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 195 |
IC61SF25632D-6.5TQ |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 196 |
IC61SF25632D-6.5TQI |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 197 |
IC61SF25636D-6.5B |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 198 |
IC61SF25636D-6.5BI |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 199 |
IC61SF25636D-6.5Q |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 200 |
IC61SF25636D-6.5QI |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 201 |
IC61SF51218D-6.5B |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 202 |
IC61SF51218D-6.5BI |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 203 |
IC61SF51218D-6.5TQ |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 204 |
IC61SF51218D-6.5TQI |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 205 |
IRIS401X |
15V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 206 |
KM44C256D-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 207 |
LCD-640X480A |
640 x 480 Dots Graphic LCD |
Vishay |
| 208 |
LD-603 |
Flat displays |
ROHM |
| 209 |
LD-603DU |
Flat display |
ROHM |
| 210 |
LD-603MG |
Flat display |
ROHM |
| | | |
