| No. |
Part Name |
Description |
Manufacturer |
| 181 |
HM5112805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 182 |
HM5113805FLTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 183 |
HM5113805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 184 |
HR11-9BJD-6P |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 185 |
HR11-9BJD-6S |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 186 |
HR11-9BPD-6P |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 187 |
HR11-9BPD-6S |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 188 |
HR11-9BRD-6P |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 189 |
HR11-9BRD-6S |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 190 |
HYM324000GD-60 |
4M x 32 Bit DRAM Module (SO-DIMM) |
Infineon |
| 191 |
HYM324000GD-60 |
4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
Siemens |
| 192 |
HYM328000GD-60 |
8M x 32 Bit DRAM Module (SO-DIMM) |
Infineon |
| 193 |
HYM328000GD-60 |
8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
Siemens |
| 194 |
HYM328020GD-60 |
8M x 32 Bit DRAM Module (SO-DIMM) |
Infineon |
| 195 |
HYM328020GD-60 |
8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
Siemens |
| 196 |
HYM64V2005GCD-60 |
2M x 64 Bit EDO DRAM Module (SO-DIMM)... |
Infineon |
| 197 |
HYM64V4005GCD-60 |
4M x 64 Bit EDO DRAM Module (SO-DIMM)... |
Infineon |
| 198 |
IC61SF25632D-6.5B |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 199 |
IC61SF25632D-6.5BI |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 200 |
IC61SF25632D-6.5TQ |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 201 |
IC61SF25632D-6.5TQI |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 202 |
IC61SF25636D-6.5B |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 203 |
IC61SF25636D-6.5BI |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 204 |
IC61SF25636D-6.5Q |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 205 |
IC61SF25636D-6.5QI |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 206 |
IC61SF51218D-6.5B |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 207 |
IC61SF51218D-6.5BI |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 208 |
IC61SF51218D-6.5TQ |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 209 |
IC61SF51218D-6.5TQI |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 210 |
IRIS401X |
15V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
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